Fabrication and characterization of SMA film actuator array with bias spring for high-power MEMS tactile display

2020 ◽  
Vol 227 ◽  
pp. 111307
Author(s):  
Jiale Xu ◽  
Yusuke Kimura ◽  
Kazuki Tsuji ◽  
Konomu Abe ◽  
Tomomi Shimizu ◽  
...  
Keyword(s):  
High Power ◽  
Tactile Display ◽  
Power Mems ◽  
Fabrication And Characterization

Fabrication and characterization of high-power diode lasers

1999 ◽  
Author(s):  
Juergen Jandeleit ◽  
Nicolas Wiedmann ◽  
Andreas Ostlender ◽  
Wolfgang Brandenburg ◽  
Peter Loosen ◽  
...  
Keyword(s):  
High Power ◽  
Diode Lasers ◽  
Fabrication And Characterization ◽  
Power Diode

Design, Fabrication and Characterization of a 4.5kV / 50A 4H-SiC PiN Rectifiers

2019 ◽  
Vol 954 ◽  
pp. 85-89
Author(s):  
Yue Wei Liu ◽  
Rui Xia Yang ◽  
Xiao Chuan Deng
Keyword(s):  
High Power ◽  
Room Temperature ◽  
Parallel Plane ◽  
Electrical Performance ◽  
Optimum Process ◽  
Forward Current ◽  
Blocking Voltage ◽  
Fabrication And Characterization ◽  
Numerical Device

In this work, a 4.5kV/50A 4H-SiC PiN rectifiers with mesa combined with double-JTE structures is successfully developed for high power applications. Two-dimension numerical device simulator Silvaco-TCAD is applied to optimizing the electrical performance of fabricated rectifiers. Mesa-combined double-JTE structure is utilized to achieve a high blocking voltage with a wider optimum process latitude. A forward current is 50 A at room temperature when SiC PiN device bias 4.1 V, while the maximum blocking voltage achieved is 4.7 kV, reaching up to 86% of parallel-plane junction bulk breakdown.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

2010 ◽  
Vol 27 (5) ◽  
pp. 054204 ◽  
Author(s):  
Ji Lian ◽  
Zhang Shu-Ming ◽  
Jiang De-Sheng ◽  
Liu Zong-Shun ◽  
Zhang Li-Qun ◽  
...  
Keyword(s):  
High Power ◽  
Array Structure ◽  
Fabrication And Characterization
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