Fabrication and characterization of high current gain ((β=430) and high power (23 A-500 V) 4H-SiC darlington bipolar transistors

2004 ◽  
Author(s):  
Yanbin Luo ◽  
Jianhui Zhang ◽  
P. Alexandrov ◽  
L. Fursin ◽  
J.H. Zhao
Keyword(s):  
High Power ◽  
Bipolar Transistors ◽  
Current Gain ◽  
High Current ◽  
Fabrication And Characterization

Fabrication and Characterization of High-Current-Gain 4H-SiC Bipolar Junction Transistors

2008 ◽  
Vol 55 (8) ◽  
pp. 1899-1906 ◽  
Author(s):  
Jianhui Zhang ◽  
Xueqing Li ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
Xiaohui Wang ◽  
...  
Keyword(s):  
Current Gain ◽  
Bipolar Junction Transistors ◽  
High Current ◽  
Fabrication And Characterization

scholarly journals A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
John T Torvik ◽  
M. Leksono ◽  
J. I. Pankove ◽  
B. Van Zeghbroeck
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Device Structure ◽  
Fabrication And Characterization ◽  
Dc Current

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.

High-current-gain submicrometer InGaAs/InP heterostructure bipolar transistors

1988 ◽  
Vol 9 (10) ◽  
pp. 524-526 ◽  
Author(s):  
R.N. Nottenburg ◽  
Y.-K. Chen ◽  
M.B. Panish ◽  
R. Hamm ◽  
D.A. Humphrey
Keyword(s):  
Bipolar Transistors ◽  
Current Gain ◽  
High Current

Fabrication and Characterization of InP Heterojunction Bipolar Transistors with Emitter Edges Parallel to [001] and [010] Crystal Orientations

1999 ◽  
Vol 38 (Part 1, No. 2B) ◽  
pp. 1200-1203 ◽  
Author(s):  
Noureddine Matine ◽  
Martin W. Dvorak ◽  
Jean-Luc Pelouard ◽  
Fabrice Pardo ◽  
Colombo R. Bolognesi
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Crystal Orientations ◽  
Fabrication And Characterization

Fabrication and characterization of ZnSe/GaAs heterostructure bipolar transistors grown by molecular beam epitaxy

1992 ◽  
Vol 60 (11) ◽  
pp. 1345-1347 ◽  
Author(s):  
Annette S. Glaeser ◽  
James L. Merz ◽  
Robert E. Nahory ◽  
Maria C. Tamargo
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
Fabrication And Characterization

Fabrication and characterization of lateral InP/InGaAsP heterojunctions and bipolar transistors

1989 ◽  
Vol 54 (23) ◽  
pp. 2318-2320 ◽  
Author(s):  
H‐J. Yoo ◽  
J. R. Hayes ◽  
C. Caneau ◽  
R. Bhat ◽  
M. Koza
Keyword(s):  
Bipolar Transistors ◽  
Fabrication And Characterization
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