Mechanical modeling of metal thin films on elastomers for femtosecond laser patterned interconnects

The femtosecond laser drilling for metal thin film is theoretically investigated in this paper. Femtosecond laser patterning of metal thin films is of technological significance because the fabrication of electrodes or metallization lines is a key process commonly required in the manufacturing of modern electronic devices. A femtosecond pulsed laser has a temporally short pulse that does not cause significant heat conduction in the material. This property of femtosecond laser pulse drilling makes sub-micron machining achievable with laser irradiation. Considering vaporization as the mechanism of the material removal, this paper employs two-temperature model to analyze the thermal process for femtosecond laser drilling of metal thin film. The variations of the drilling rate and squared diameter with laser fluence are compared with the available experimental data. This study also analytically validates that the drilling depth per pulse is governed by the optical penetration depth for low laser fluences and the squared crater diameter is linearly in proportion to the logarithm of laser fluence.

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Thermal analysis of femtosecond laser processing for metal thin films

Physica Scripta ◽

10.1088/0031-8949/2010/t139/014005 ◽

2010 ◽

Vol T139 ◽

pp. 014005 ◽

Cited By ~ 4

Author(s):

Ching-Yen Ho ◽

Kuang-Ming Hung ◽

Mao-Yu Wen ◽

Je-Ee Ho

Keyword(s):

Thin Films ◽

Thermal Analysis ◽

Femtosecond Laser ◽

Laser Processing ◽

Metal Thin Films ◽

Femtosecond Laser Processing

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Ablation of metal thin films using femtosecond laser Bessel vortex beams

Applied Physics A ◽

10.1007/s00339-014-8808-2 ◽

2014 ◽

Vol 118 (1) ◽

pp. 125-129 ◽

Cited By ~ 10

Author(s):

Ramazan Sahin ◽

Tansu Ersoy ◽

Selcuk Akturk

Keyword(s):

Thin Films ◽

Femtosecond Laser ◽

Metal Thin Films ◽

Vortex Beams

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Transmission Electron Microscopy studies of the vacancy ordering in YSI2-X thin films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100087124 ◽

1991 ◽

Vol 49 ◽

pp. 562-563

Author(s):

F.-R. Chen ◽

T. L. Lee ◽

L. J. Chen

Keyword(s):

Crystal Structure ◽

Electron Microscopy ◽

Thin Films ◽

Diffraction Pattern ◽

Annealing Temperature ◽

Lattice Mismatch ◽

Si Substrate ◽

Metal Thin Films ◽

Transmission Electron ◽

Vacancy Ordering

YSi2-x thin films were grown by depositing the yttrium metal thin films on (111)Si substrate followed by a rapid thermal annealing (RTA) at 450 to 1100°C. The x value of the YSi2-x films ranges from 0 to 0.3. The (0001) plane of the YSi2-x films have an ideal zero lattice mismatch relative to (111)Si surface lattice. The YSi2 has the hexagonal AlB2 crystal structure. The orientation relationship with Si was determined from the diffraction pattern shown in figure 1(a) to be and . The diffraction pattern in figure 1(a) was taken from a specimen annealed at 500°C for 15 second. As the annealing temperature was increased to 600°C, superlattice diffraction spots appear at position as seen in figure 1(b) which may be due to vacancy ordering in the YSi2-x films. The ordered vacancies in YSi2-x form a mesh in Si plane suggested by a LEED experiment.

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