A novel wide bandwidth FBSSIR integrated low noise amplifier for satellite navigational receiver system

2021 ◽  
pp. 105288
Author(s):  
R. Vignesh ◽  
Pradeep Gorre ◽  
Sandeep Kumar
Author(s):  
Abu Bakar Ibrahim ◽  
Ahmad Zamzuri Mohamad Ali

<p>Advancement in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in current technology transformation. Broadband communication is a method of telecommunication that are available for transmitting large amounts of data, voice and video over long distance using different frequencies. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmition. This study was aimed to design a microwave Low Noise Amplifier for wireless application that will work at 5.8 GHz using  high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 16.8 dB and noise figure (NF) of 1.20 dB. The input reflection (S<sub>11</sub>) and output return loss (S<sub>22</sub>) are -10.5 dB and -13.3 dB respectively. The bandwidth of the amplifier recorded is 1.2 GHz. The input sensitivity is compliant with the IEEE 802.16 standards.</p>


Author(s):  
J.G. Bij de Vaate ◽  
E.E.M. Woestenburg ◽  
R.H. Witvers ◽  
R. Pantaleoni

Author(s):  
Abu Bakar Ibrahim ◽  
Ahmad Zamzuri Mohamad Ali

<p>Advancement in the wireless industry, internet access without borders and increasing demand for high data rate wireless digital communication moving us toward the optimal development of communication technology. Wireless communication is a technology that plays an important role in current technology transformation. Broadband communication is a method of telecommunication that are available for transmitting large amounts of data, voice and video over long distance using different frequencies. Specifically, Low Noise Amplifier which is located at the first block of receiver system, makes it one of the important element in improving signal transmition. This study was aimed to design a microwave Low Noise Amplifier for wireless application that will work at 5.8 GHz using  high-performance low noise superHEMT transistor FHX76LP manufactured by Eudyna Technologies. The low noise amplifier (LNA) produced gain of 16.8 dB and noise figure (NF) of 1.20 dB. The input reflection (S<sub>11</sub>) and output return loss (S<sub>22</sub>) are -10.5 dB and -13.3 dB respectively. The bandwidth of the amplifier recorded is 1.2 GHz. The input sensitivity is compliant with the IEEE 802.16 standards.</p>


2016 ◽  
Vol 54 (5) ◽  
pp. 584
Author(s):  
Phong Dai Le ◽  
Vu Duy Thong ◽  
Pham Le Binh

In this paper, a three stages monolithic low noise amplifier (LNA) for T/R module application is presented. This LNA is fully integrated on 0.15-um pHEMT GaAs technology and achieves a wide bandwidth from 6 GHz to 11 GHz. Within this band, the LNA has the minimum of 1.3 dB noise figure and over 25 dB small signal gain. The output third order interception point (OIP3) is over 30 dBm and the 1 dB compression point (P1 dB) is 16 dBm at the output.


2009 ◽  
Vol 1 (5) ◽  
pp. 447-452 ◽  
Author(s):  
Heesong Seo ◽  
Hyejeong Song ◽  
Changjoon Park ◽  
Jehyung Yoon ◽  
Inyoung Choi ◽  
...  

A 2.4 GHz CMOS blocker filtering low-noise amplifier (BF-LNA) suitable for Bluetooth™ application is presented. The circuit employs a differential amplifier topology with a current mirror active load and a notch filter. Each path amplifies differentially with the common mode input signal, but there is a notch filter rejecting only the wanted signal at one path. By subtracting the two signals from each path, the large interferers are rejected and only the wanted signal is amplified. Therefore, it becomes a narrow-band amplifier with blocker filtering capability, realizing a receiver system without need of the off-chip SAW filter. The BF-LNA is designed using a 0.13-μm CMOS process. The measured performances are a gain of 11.4 dB, and a noise figure of 1.85 dB. Attenuation levels at 400 MHz apart from the target frequency are −13 and −29 dBc at each sideband. The P1dB,in and IIP3 are −8.2 and 1.46 dBm, respectively. The proposed BF-LNA can reject large interferers at the front-end of the receiver system with a good noise figure.


This paper presents the simulation and measured results of a Low Noise Amplifier (LNA) working at 28 GHz for the 5G wireless system. LNA is used to amplify the weak receiving signals in the RF receiver system. The 28 GHz (Ka-band) LNA is designed to work for 5G technology wireless system. Here a Fujitsu FHR02X transistor is used in the simulation process, where the one-stage LNA is adopting a common-source with source inductive degenerative topology.In the fabrication process, GaAs pHEMT MMIC HMC519LC4 LNA is mounted on the Rogers 4003C board (εr = 3.38 and δ = 0.0027)and tested using (PNA-X N5246A) Microwave Network Analyzer. The final LNA design in the simulation process achieves a power gain of 9.185 dB, input and output return losses of – 13.124 dB and – 15.455 dB respectively, and noise figure of 9.185 dB. Furthermore, the fabricated LNA achieves a power gain of 10.91 dB, input and output return losses of - 7.75 dB and - 22.13 dB respectively. Although the return loss (S11) value is higher than -10 dB, but the LNA still able to obtain gain more than 10 dB.Thesimulation and fabricated LNA have input return loss quite closed to the given value in the datasheet. Thus, the LNA transmission line has a good output matching design.


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