From component to system failure analysis – The future challenge within work-sharing supply chains

Peter Jacob

doi:10.1016/j.microrel.2011.06.066

From component to system failure analysis – The future challenge within work-sharing supply chains

Microelectronics Reliability ◽

10.1016/j.microrel.2011.06.066 ◽

2011 ◽

Vol 51 (9-11) ◽

pp. 1618-1623

Author(s):

Peter Jacob

Keyword(s):

Failure Analysis ◽

Supply Chains ◽

System Failure ◽

Future Challenge ◽

Work Sharing ◽

The Future

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A Study of Pad Contamination Defect and Removal

ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2008p0464 ◽

2008 ◽

Author(s):

K.A. Mohammad ◽

L.J. Liu ◽

S.F. Liew ◽

S.F. Chong ◽

D.G. Lee ◽

...

Keyword(s):

Failure Analysis ◽

Gate Oxide ◽

Action Plans ◽

Preventive Action ◽

Oxide Breakdown ◽

Reliability Level ◽

The Future ◽

Dry Etch ◽

Removal Technique

Abstract The paper focuses on the pad contamination defect removal technique. The defect is detected at the outgoing inspection step. The failure analysis results showed that the defect is Fluorine type contamination. The failure analysis indicated many source contributors mainly from Fluorine based processes. The focus is in the present work is in the rework method for the removal of this defect. The combination of wet and dry etch processing in the rework routine is utilized for the removal of the defect and preventive action plans for in-line were introduced and implemented to avoid this event in the future. The reliability of the wafer is verified using various tests including full map electrical, electrical sort, gate oxide breakdown (GOI) and wafer reliability level, passivation quick kill to ensure the integrity of the wafer after undergoing the rework routine. The wafer is monitored closely over a period of time to ensure it has no mushroom defect.

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Failure Analysis of Single Shared Column Fail in DRAM Using Nano-Probing Technique

ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2008p0423 ◽

2008 ◽

Author(s):

Suk Min Kim ◽

Jung Ho Lee ◽

Jong Hak Lee ◽

Hyung Ki Kim ◽

Myung Sick Chang ◽

...

Keyword(s):

Failure Analysis ◽

Failure Mechanisms ◽

Electrical Characteristics ◽

The Future ◽

Electrical Analysis

Abstract We report an analysis of a single shared column fail on DRAM technology using a nano-probing technique in this work. The electrical characteristics of the failed transistors show that the column fails were caused by two different failure mechanisms: abnormal contact and implant profiles. We believe that electrical analysis using nano-probing will be a powerful tool for non-visible failure analysis in the future because it is impossible to clearly reveal these two different failure mechanisms solely using physical failure methods.

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