High temperature storage reliability investigation of the Al–Cu wire bond interface

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1966-1970 ◽  
Author(s):  
R. Pelzer ◽  
M. Nelhiebel ◽  
R. Zink ◽  
S. Wöhlert ◽  
A. Lassnig ◽  
...  
Keyword(s):  
High Temperature ◽  
Wire Bond ◽  
High Temperature Storage ◽  
Bond Interface ◽  
Temperature Storage

Evaluation of Secondary Wire Bond Integrity on Ag Plated and Ni/Pd Based Lead Frame Plating Finishes

2009 ◽  
Author(s):  
G. Srinivasan ◽  
R. Murcko ◽  
K. Srihari
Keyword(s):  
High Temperature ◽  
Failure Analysis ◽  
Wire Bonding ◽  
Strength Test ◽  
Lead Frame ◽  
Wire Bond ◽  
Pull Strength ◽  
High Temperature Storage ◽  
The Wire ◽  
Temperature Storage

As the legislatures demand the use of lead (Pb) free plating finishes in lead frame manufacturing, different plating finishes are being offered by the lead frame makers. Lead frames are most often designed with two different Pb free plating finishes, primarily tin and nickel/palladium (Ni/Pd) based. The tin post mold plated lead frames use silver selective plating on the lead fingers for secondary wire bonding whereas the pre-plated Ni/Pd based lead frames use the same Ni/Pd based finish throughout. Enhanced versions of Ni/Pd based plating finishes such as nickel/palladium/gold (Ni/Pd/Au), nickel/palladium/gold-palladium (Ni/Pd/Au-Pd) and nickel/palladium/gold-silver (Ni/Pd/Au – Ag) are now available to further improve the wirebondability, solderability and reliability of the package. The development of a new lead frame finish involves a wide variety of concerns which must be addressed and thus mandates further evaluation of these new structures. Using the common Pb free lead frame plating finish of selectively plated silver (Ag) as the basis, a comparative approach was used to evaluate the secondary wire bond integrity of a 25 micron (1 mil) thick gold wire on Ni/Pd based lead frame plating finishes. The integrity of the secondary wire bonds for different plating finishes was investigated at various assembly thermal exposure stages using the wire pull strength test as the arbiter. Reliability tests, such as High Temperature Storage (HTS) and Unbiased Highly Accelerated Stress Test (UBHAST), were also conducted. Finally, failure analysis was conducted with the help of metallographic cross sectioning, SEM/EDX (Scanning Electron Microscope/Energy Dispersive X-ray) analysis and statistical analysis of the wire pull strength test results. Before wire bonding the lead frames, the plating surface was investigated for its surface integrity with the help of plating quality tests, such as: (i) adhesive tape test, (ii) bend test, (iii) heating test and the (iv) scribing test. Also, since wire pull is a destructive test, a statistical method called a nested gauge R&R study was used to estimate the repeatability and reproducibility of the measurement system. Failure analysis showed that there were silver and copper migrations over the Ag plated lead frame when exposed to a high temperature storage test at 175°C for 1000 hrs, but this did not affect the bond integrity. However, the Ni/Pd based lead frames did not show any metal migration since nickel acts as a barrier against the base metal diffusion.

High-temperature storage and cycling of C-LiFePO4/graphite Li-ion cells

2005 ◽  
Vol 7 (7) ◽  
pp. 669-673 ◽  
Author(s):  
K. Amine ◽  
J. Liu ◽  
I. Belharouak
Keyword(s):  
High Temperature ◽  
High Temperature Storage ◽  
Li Ion ◽  
Temperature Storage

High Temperature Storage and Gamma Radiation Effects on Mechanical Properties of Stacked Die Package

2014 ◽  
Vol 895 ◽  
pp. 567-570
Author(s):  
Azman Jalar ◽  
Wan Yusmawati Wan Yusoff ◽  
Norinsan Kamil Othman ◽  
Irman Abdul Rahman
Keyword(s):  
High Temperature ◽  
Gamma Radiation ◽  
Radiation Effects ◽  
Storage Period ◽  
Bending Test ◽  
Three Point Bending ◽  
Micromechanical Properties ◽  
3D Ct Scan ◽  
High Temperature Storage ◽  
Temperature Storage

Effect of gamma radiation (1.33 MeV) and high temperature storage of semiconductor package towards micromechanical properties has been investigated. The in-house fabricated Quad Flat No Lead was exposed to gamma radiation with the dose of 5 Gy. Afterwards, high temperature storage was performed at 150 °C for 10, 100 and 1000 hours. Subsequently, the three point bending technique was carried out to obtain the micromechanical properties of semiconductor package. The fracture of the packages caused by three point bending test was subjected to 3D CT scan to capture the image of the fracture. Irradiated package shows the decreasing in their strength with increasing doses of gamma radiation. However, the strength of the package was improved after high temperature storage for 10 hours and decreased as the storage period is extended. Further analysis exhibited that high temperature storage for 10 hours is reveal as good thermal treatment for package in radioactive environment application.

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