An investigation on capacitance-trigger ESD protection devices for high voltage integrated circuits

2014 ◽  
Vol 54 (6-7) ◽  
pp. 1169-1172 ◽  
Author(s):  
Hailian Liang ◽  
Weidong Nie ◽  
Xiaofeng Gu ◽  
Shurong Dong ◽  
W.S. Lau
2016 ◽  
Vol 26 (02) ◽  
pp. 1750023
Author(s):  
Minoh Son ◽  
Changkun Park

In this study, we propose cell-based diodes which are laid out with a zigzag shape as electrostatic discharge (ESD) protection elements to enhance the ESD survival level of the diodes. Generally, diodes are regarded as simple ESD protection devices in integrated circuits. During ESD events, the P–N junction of the ESD diode acts as a thermal source. In this study, we investigate a distributed layout method which relies on a cell-based ESD diode to prevent an excessive increase in the temperature at the P–N junction. However, although the distributed layout enhances the ESD survival levels of the ESD diode, the required area increases compared that of a typical layout. Thus, we propose a zigzag layout technique for the cell-based diode to reduce the area and obtain a high ESD survival level. To verify the feasibility of the zigzag layout techniques for cell-based diodes, we designed ESD diodes using 110[Formula: see text]nm RF CMOS technology. The experimental results successfully demonstrate the feasibility of the proposed method.


2012 ◽  
Vol 271-272 ◽  
pp. 1286-1290
Author(s):  
Shen Li Chen ◽  
Chi Ling Chu

Two kinds of efficient electrostatic discharge (ESD) protection circuits in lateral drain extended MOSFETs (DEMOSFETs) will be designed and investigated in this paper. One kind of these test samples is fabricated with an SCR structure, which has the lowest turned-on resistance when it is triggered by a high voltage of ESD event. The SCR circuit is the most efficient of all protection devices in terms of ESD performance per unit area. Furthermore, the other type of these DUTs is an SCR with RC-triggered structure, which will have a small trigger voltage (Vt1) under ESD event, and then it obtains a good ESD immunity level.


Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 443
Author(s):  
Mihaela-Daniela Dobre ◽  
Philippe Coll ◽  
Gheorghe Brezeanu

This paper proposes an investigation of a CDM (charge device model) electrostatic discharge (ESD) protection method used in submicronic input–output (I/O) structures. The modeling of the commonly used ESD protection devices as well as the modeling of the breakdown caused by ESD is not accurate using traditional commercial tools, hence the need for test-chip implementation, whenever a new technology node is used in production. The proposed method involves defining, implementing, testing, and concluding on one test-chip structure named generically “CDM ground resistance”. The structure assesses the maximum ground resistance allowed for the considered technology for which CDM protection is assured. The findings are important because they will be actively used as CDM protection for all I/O structures developed in the considered submicronic technology node. The paper will conclude on the constraints in terms of maximum resistance of ground metal track allowed to be CDM protected.


1989 ◽  
Vol 24 (10) ◽  
pp. 993-1000 ◽  
Author(s):  
G. Charitat ◽  
A. Nezar ◽  
P. Rossel

Author(s):  
Y.S. Choi ◽  
J.J. Kim ◽  
C.K. Jeon ◽  
M.H. Kim ◽  
S.L. Kim ◽  
...  
Keyword(s):  

2007 ◽  
Vol 46 (2) ◽  
pp. 569-571
Author(s):  
Tomoyuki Yamazaki ◽  
Naoki Kumagai ◽  
Akira Nishiura ◽  
Tatsuhiko Fujihira ◽  
Takashi Matsumoto

1999 ◽  
Vol 39 (6-7) ◽  
pp. 1143-1148 ◽  
Author(s):  
D. Pogany ◽  
N. Seliger ◽  
M. Litzenberger ◽  
H. Gossner ◽  
M. Stecher ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document