A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric

Microelectronics Reliability ◽

10.1016/j.microrel.2015.12.004 ◽

2016 ◽

Vol 57 ◽

pp. 24-33 ◽

Author(s):

Feng Ji ◽

J.P. Xu ◽

L. Liu ◽

W.M. Tang ◽

P.T. Lai

Keyword(s):

Threshold Voltage ◽

Gate Dielectric ◽

High K ◽

Threshold Voltage Model ◽

High K Gate Dielectric

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A compact threshold-voltage model of MOSFETs with stack high-k gate dielectric

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2009.5394286 ◽

2009 ◽

Author(s):

F. Ji ◽

J.P. Xu ◽

J.J. Chen ◽

H.X. Xu ◽

C.X. Li ◽

...

Keyword(s):

Threshold Voltage ◽

Gate Dielectric ◽

High K ◽

Threshold Voltage Model ◽

High K Gate Dielectric

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A threshold voltage model for high-k gate-dielectric MOSFETs considering fringing-field effect

Chinese Physics ◽

10.1088/1009-1963/16/6/047 ◽

2007 ◽

Vol 16 (6) ◽

pp. 1757-1763 ◽

Author(s):

Ji Feng ◽

Xu Jing-Ping ◽

Lai Pui-To

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Gate Dielectric ◽

High K ◽

Fringing Field ◽

Fringing Field Effect ◽

Threshold Voltage Model ◽

High K Gate Dielectric

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Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric

Microelectronics Reliability ◽

10.1016/j.microrel.2007.03.001 ◽

2008 ◽

Vol 48 (2) ◽

pp. 181-186 ◽

Author(s):

J.P. Xu ◽

F. Ji ◽

P.T. Lai ◽

J.G. Guan

Keyword(s):

Threshold Voltage ◽

Gate Dielectric ◽

High K ◽

High K Gate Dielectric

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Threshold Voltage (Vth) Tunability of pMOSFETs with Ternary HfxMoyNz Metal Gate and Gd2O3 High-k Gate Dielectric

10.7567/ssdm.2009.p-1-8 ◽

2009 ◽

Author(s):

H. K. Peng ◽

C. S. Lai ◽

J. C. Wang

Keyword(s):

Threshold Voltage ◽

Gate Dielectric ◽

High K ◽

High K Gate Dielectric

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Models on threshold voltage/subthreshold swing and structural design of high-k gate dielectric GeOI MOSFET

Acta Physica Sinica ◽

10.7498/aps.63.087301 ◽

2014 ◽

Vol 63 (8) ◽

pp. 087301

Author(s):

Fan Min-Min ◽

Xu Jing-Ping ◽

Liu Lu ◽

Bai Yu-Rong ◽

Huang Yong

Keyword(s):

Threshold Voltage ◽

Structural Design ◽

Gate Dielectric ◽

Subthreshold Swing ◽

High K ◽

High K Gate Dielectric

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Compact modeling of the effects of parasitic internal fringe capacitance on the threshold voltage of high-k gate-dielectric nanoscale SOI MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2006.870424 ◽

2006 ◽

Vol 53 (4) ◽

pp. 706-711 ◽

Author(s):

M.J. Kumar ◽

S.K. Gupta ◽

V. Venkataraman

Keyword(s):

Threshold Voltage ◽

Gate Dielectric ◽

Compact Modeling ◽

High K ◽

High K Gate Dielectric

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A threshold voltage analytical model for high- k gate dielectric MOSFETs with fully overlapped lightly doped drain structures

Chinese Physics B ◽

10.1088/1674-1056/21/5/057304 ◽

2012 ◽

Vol 21 (5) ◽

pp. 057304 ◽

Author(s):

Fei Ma ◽

Hong-Xia Liu ◽

Qian-Wei Kuang ◽

Ji-Bin Fan

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Gate Dielectric ◽

High K ◽

Lightly Doped Drain ◽

High K Gate Dielectric

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The impact of high-k gate dielectric on Junctionless Vertical Double Gate MOSFET

International Journal of Computer Sciences and Engineering ◽

10.26438/ijcse/v6i6.14751478 ◽

2018 ◽

Vol 6 (6) ◽

pp. 1475-1478

Author(s):

Jagdeep Rahul

Keyword(s):

Gate Dielectric ◽

Double Gate ◽

High K ◽

Double Gate Mosfet ◽

High K Gate Dielectric

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Development of High-K Gate Dielectric Materials

Journal of Inorganic Materials ◽

10.3724/sp.j.1077.2008.00865 ◽

2008 ◽

Vol 23 (5) ◽

pp. 865-871 ◽

Author(s):

De-Qi WU

Keyword(s):

Gate Dielectric ◽

Dielectric Materials ◽

High K ◽

High K Gate Dielectric

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Optimization of Device Dimensions of High-k Gate Dielectric Based DG-TFET for Improved Analog/RF Performance

Silicon ◽

10.1007/s12633-021-01127-y ◽

2021 ◽

Author(s):

Shubham Tayal ◽

Goyal Vibhu ◽

Shweta Meena ◽

Ravi Gupta

Keyword(s):

Gate Dielectric ◽

High K ◽

Rf Performance ◽

High K Gate Dielectric

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