Mechanical stress-induced degradation model of amorphous InGaZnO thin film transistors by strain-initiated defect generation

2017 ◽  
Vol 76-77 ◽  
pp. 592-595 ◽  
Author(s):  
Chuntaek Park ◽  
Ilgu Yun
Keyword(s):  
Thin Film ◽  
Mechanical Stress ◽  
Thin Film Transistors ◽  
Degradation Model ◽  
Defect Generation ◽  
Amorphous Ingazno

Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers

2013 ◽  
Vol 52 (9R) ◽  
pp. 090205 ◽  
Author(s):  
Runze Zhan ◽  
Chengyuan Dong ◽  
Bo-Ru Yang ◽  
Han-Ping D. Shieh
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Amorphous Ingazno

High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing

2021 ◽  
Vol 42 (10) ◽  
pp. 1480-1483
Author(s):  
Yining Yu ◽  
Nannan Lv ◽  
Dongli Zhang ◽  
Yiran Wei ◽  
Mingxiang Wang
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Low Temperature Annealing ◽  
Amorphous Ingazno

Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

2013 ◽  
Vol 114 (18) ◽  
pp. 184502 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
N. A. Hastas ◽  
N. Choi ◽  
F. Mahmoudabadi ◽  
M. K. Hatalis ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Potential ◽  
Thin Film Transistors ◽  
Current Model ◽  
Drain Current ◽  
Amorphous Ingazno

Effects of geometrically extended contact area on electrical properties in amorphous InGaZnO thin film transistors

2014 ◽  
Vol 558 ◽  
pp. 279-282 ◽  
Author(s):  
Jae-Sung Kim ◽  
Min-Kyu Joo ◽  
Ming Xing Piao ◽  
Seung-Eon Ahn ◽  
Yong-Hee Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Contact Area ◽  
Thin Film Transistors ◽  
Extended Contact ◽  
Amorphous Ingazno
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