Analytical surface-potential-based drain current model for amorphous InGaZnO thin film transistors

Journal of Applied Physics ◽

10.1063/1.4831665 ◽

2013 ◽

Vol 114 (18) ◽

pp. 184502 ◽

Author(s):

A. Tsormpatzoglou ◽

N. A. Hastas ◽

N. Choi ◽

F. Mahmoudabadi ◽

M. K. Hatalis ◽

...

Keyword(s):

Thin Film ◽

Surface Potential ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Amorphous Ingazno

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A surface-potential-based drain current model suitable for poly-Si thin film transistors with thin body and thin gate oxide

Journal of Physics Conference Series ◽

10.1088/1742-6596/1141/1/012066 ◽

2018 ◽

Vol 1141 ◽

pp. 012066

Author(s):

Zhen Zhu ◽

Junhao Chu

Keyword(s):

Thin Film ◽

Surface Potential ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Thin Body ◽

Thin Gate Oxide ◽

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A drain current model for amorphous InGaZnO thin film transistors considering temperature effects

Solid-State Electronics ◽

10.1016/j.sse.2017.11.007 ◽

2018 ◽

Vol 141 ◽

pp. 23-30 ◽

Author(s):

M.X. Cai ◽

R.H. Yao

Keyword(s):

Thin Film ◽

Temperature Effects ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Amorphous Ingazno

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Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.7798 ◽

2008 ◽

Vol 47 (10) ◽

pp. 7798-7802 ◽

Author(s):

Hiroshi Tsuji ◽

Tsuyoshi Kuzuoka ◽

Yuji Kishida ◽

Yoshiyuki Shimizu ◽

Masaharu Kirihara ◽

...

Keyword(s):

Thin Film ◽

Surface Potential ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Current Model ◽

Drain Current ◽

Silicon Thin Film

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Analytical Drain Current Model for Amorphous InGaZnO Thin-Film Transistors at Different Temperatures Considering Both Deep and Tail Trap States

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2721436 ◽

2017 ◽

Vol 64 (9) ◽

pp. 3654-3660 ◽

Author(s):

Hongyu He ◽

Yuan Liu ◽

Binghui Yan ◽

Xinnan Lin ◽

Xueren Zheng ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Trap States ◽

Different Temperatures ◽

Amorphous Ingazno

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A physical surface-potential-based drain current model for polysilicon thin-film transistors

Journal of Semiconductors ◽

10.1088/1674-4926/33/3/034005 ◽

2012 ◽

Vol 33 (3) ◽

pp. 034005 ◽

Author(s):

Xiyue Li ◽

Wanling Deng ◽

Junkai Huang

Keyword(s):

Thin Film ◽

Surface Potential ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Physical Surface

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A threshold voltage and drain current model for symmetric dual-gate amorphous InGaZnO thin film transistors

Science China Information Sciences ◽

10.1007/s11432-016-9049-2 ◽

2017 ◽

Vol 61 (2) ◽

Author(s):

Minxi Cai ◽

Ruohe Yao

Keyword(s):

Thin Film ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Dual Gate ◽

Amorphous Ingazno

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Analytical drain current model for symmetric dual-gate amorphous indium gallium zinc oxide thin-film transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.014301 ◽

2017 ◽

Vol 57 (1) ◽

pp. 014301 ◽

Author(s):

Ting Qin ◽

Congwei Liao ◽

Shengxiang Huang ◽

Tianbao Yu ◽

Lianwen Deng

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Oxide Thin Film ◽

Indium Gallium Zinc Oxide ◽

Zinc Oxide Thin Film ◽

Dual Gate ◽

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Analytical Drain Current Model for Poly-Si Thin-Film Transistors Biased in Strong Inversion Considering Degradation of Tail States at Grain Boundary

IEEE Transactions on Electron Devices ◽

10.1109/ted.2012.2236332 ◽

2013 ◽

Vol 60 (3) ◽

pp. 1122-1127

Author(s):

Lisa L. Wang ◽

James B. Kuo ◽

Shengdong Zhang

Keyword(s):

Thin Film ◽

Grain Boundary ◽

Thin Film Transistors ◽

Current Model ◽

Drain Current ◽

Strong Inversion ◽

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Surface potential measurement on contact resistance of amorphous-InGaZnO thin film transistors by Kelvin probe force microscopy

Applied Physics Letters ◽

10.1063/1.4958332 ◽

2016 ◽

Vol 109 (2) ◽

pp. 023509 ◽

Author(s):

Zhiheng Han ◽

Guangwei Xu ◽

Wei Wang ◽

Congyan Lu ◽

Nianduan Lu ◽

...

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Surface Potential ◽

Thin Film Transistors ◽

Kelvin Probe Force Microscopy ◽

Kelvin Probe ◽

Potential Measurement ◽

Force Microscopy ◽

Amorphous Ingazno

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A surface-potential-based drain current compact model for a-InGaZnO thin-film transistors in Non-Degenerate conduction regime

Solid-State Electronics ◽

10.1016/j.sse.2017.07.016 ◽

2017 ◽

Vol 137 ◽

pp. 38-43 ◽

Author(s):

Fei Yu ◽

Xiaoyu Ma ◽

Wanling Deng ◽

Juin J. Liou ◽

Junkai Huang

Keyword(s):

Thin Film ◽

Surface Potential ◽

Thin Film Transistors ◽

Drain Current ◽

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