The orientational dependence of single event upsets and multiple-cell upsets in 65 nm dual DICE SRAM

2019 ◽  
Vol 94 ◽  
pp. 24-31 ◽  
Author(s):  
YinYong Luo ◽  
FengQi Zhang ◽  
Chen Wei ◽  
LiLi Ding ◽  
XiaoYu Pan
Keyword(s):  
Single Event ◽  
Single Event Upsets ◽  
Multiple Cell

The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets

2011 ◽  
Vol 58 (6) ◽  
pp. 2591-2598 ◽  
Author(s):  
Michael Andrew Clemens ◽  
Brian D. Sierawski ◽  
Kevin M. Warren ◽  
Marcus H. Mendenhall ◽  
Nathaniel A. Dodds ◽  
...  
Keyword(s):  
Neutron Energy ◽  
Single Event ◽  
Single Event Upsets ◽  
Multiple Cell

scholarly journals Возникновение множественных сбоев под действием протонов в статических ОЗУ с технологической нормой 90 nm

2019 ◽  
Vol 45 (1) ◽  
pp. 20
Author(s):  
Н.А. Иванов ◽  
О.В. Лобанов ◽  
В.В. Пашук ◽  
М.О. Прыгунов ◽  
К.Г. Сизова
Keyword(s):  
Experimental Data ◽  
Integrated Circuits ◽  
Single Event ◽  
Single Event Upsets ◽  
Multiple Cell ◽  
Mev Protons

AbstractThe occurrence of single-event upsets (SEUs) in 90-nm SRAM integrated circuits irradiated by 1000-MeV protons has been investigated. The experimental data were analyzed and processed, and the results showed the possibility of multiple cell upsets in the integrated circuits studied.

Neutron and proton-induced single event upsets in advanced commercial fully depleted SOI SRAMs

2005 ◽  
Vol 52 (6) ◽  
pp. 2319-2325 ◽  
Author(s):  
J. Baggio ◽  
V. Ferlet-Cavrois ◽  
D. Lambert ◽  
P. Paillet ◽  
F. Wrobel ◽  
...  
Keyword(s):  
Single Event ◽  
Fully Depleted ◽  
Single Event Upsets

Single event upsets in gallium arsenide dynamic logic

1994 ◽  
Vol 41 (6) ◽  
pp. 2244-2251 ◽  
Author(s):  
D.J. Fouts ◽  
T. Weatherford ◽  
D. McMorrow ◽  
J.S. Melinger ◽  
A.B. Campbell
Keyword(s):  
Gallium Arsenide ◽  
Dynamic Logic ◽  
Single Event ◽  
Single Event Upsets
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