ABSTRACTThe electron traps of GaAs/AlGaAs heterostructures or superlattices (S.L.) have been investigated in a series of device structures which ranged from simple Schottky diodes to high electron mobility transistors. For the S.L. structure traps investigated, emission into the El miniband as well as A1GaAs trapping was considered. In simple heterostructures such as HEMTs, DLTS investigation of electron trapping from the 2DEG channel revealed a number of new traps, which were previously undetected with CTS (Current Transient Spectroscopy) investigations of the 2DEG. Interface traps in GaAs/AIGaAs heterojunctions were also investigated and distinguished from previously reported traps.
