scholarly journals In situ high temperature spectroscopic study of liquid inclusions and hydroxyl groups in high purity natural quartz

2021 ◽  
Vol 174 ◽  
pp. 107238
Author(s):  
Bartłomiej A. Gaweł ◽  
Anna Ulvensøen ◽  
Katarzyna Łukaszuk ◽  
Astrid Marie F. Muggerud ◽  
Andreas Erbe
2015 ◽  
Vol 44 (2) ◽  
pp. 522-529 ◽  
Author(s):  
Anne-Laure Rollet ◽  
Haruaki Matsuura ◽  
Catherine Bessada

An in situ high temperature NMR technique evidences the local structure of lithium lanthanum oxyfluoride melts.


2001 ◽  
Vol 34 (5) ◽  
pp. 722-731 ◽  
Author(s):  
T Schilles ◽  
N R J Poolton ◽  
E Bulur ◽  
L Bøtter-Jensen ◽  
A S Murray ◽  
...  

2016 ◽  
Vol 43 (8) ◽  
pp. 587-595 ◽  
Author(s):  
Gennaro Ventruti ◽  
Giancarlo Della Ventura ◽  
Nicola Corriero ◽  
Daniele Malferrari ◽  
Alessandro F. Gualtieri ◽  
...  

2009 ◽  
Vol 494 (1-2) ◽  
pp. 86-93 ◽  
Author(s):  
Valdirene G. de Resende ◽  
Alain Peigney ◽  
Eddy De Grave ◽  
Christophe Laurent

RSC Advances ◽  
2020 ◽  
Vol 10 (48) ◽  
pp. 29018-29030
Author(s):  
Bartłomiej A. Gaweł ◽  
Anna Ulvensøen ◽  
Katarzyna Łukaszuk ◽  
Bjørnar Arstad ◽  
Astrid Marie F. Muggerud ◽  
...  

In dry quartz stable closed liquid micron-size inclusions and newly formed OH groups were observed after thermal treatment.


Author(s):  
N. Rozhanski ◽  
A. Barg

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.


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