scholarly journals Palladium-oxide Extended Gate Field Effect Transistor as pH Sensor

2021 ◽  
pp. 100102
Author(s):  
Prashant Sharma ◽  
Rini Singh ◽  
Rishi Sharma ◽  
Ravindra Mukhiya ◽  
Kamlendra Awasthi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Palladium Oxide ◽  
Effect Transistor

Design and Simulation of Electrochemical Equivalent Circuit for Extended-gate FET pH Sensor Based on Experimental Value Using LTSPICE XVII

2021 ◽  
Author(s):  
Shaiful Bakhtiar Hashim ◽  
Zurita Zulkifli ◽  
Sukreen Hana Herman
Keyword(s):  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Spice Simulation ◽  
Discrete Component ◽  
Ph Values ◽  
Spice Model ◽  
Effect Transistor ◽  
Output Characteristics

Abstract A SPICE model for extended-gate field-effect transistor (EGFET) based pH sensor was developed using standard discrete components. Capacitors and resistors were used to represent the sensing and reference electrodes in the EGFET sensor system and the values of the discrete component were varied to see the output of the transistor. These variations were done to emulate the EGFET sensor output in different pH values. It was found that the experimental transfer and output characteristics of the EGFET were very similar to those from the SPICE simulation. Other than that, the changes of value components in the equivalent circuit did not affect the transfer and output characteristics graph, but the capacitor value produced significant output variation in the simulation. This can be related to the modification on the equivalent circuit was done with additional voltage, VSB (source to bulk) to produce the different VT values at different pH.

scholarly journals Graphene Channel Liquid Container Field Effect Transistor as pH Sensor

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Xin Li ◽  
Junjie Shi ◽  
Junchao Pang ◽  
Weihua Liu ◽  
Hongzhong Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Value ◽  
Ph Sensor ◽  
Drain Current ◽  
Fast Response ◽  
Monolayer Graphene ◽  
Ph Sensing ◽  
Order Of Magnitude ◽  
Effect Transistor

Graphene channel liquid container field effect transistor pH sensor with interdigital microtrench for liquid ion testing is presented. Growth morphology and pH sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on pH value is one order of magnitude higher than that of FLG (0.1). The reason is that with fewer defects, the MG is more likely to adsorb measured molecule and ion, and the molecules and ions can make the transport property change. The output sensitivities of MG are from 34.5% to 57.4% when the pH value is between 7 and 8, while sensitivity of FLG is 4.75% when thepH=7. The sensor fabrication combines traditional silicon technique and flexible electronic technology and provides an easy way to develop graphene-based electrolyte gas sensor or even biological sensors.

RF-Sputtered, Nanostructured ZnO-Based Extended-Gate Field-Effect Transistor as pH Sensor

2015 ◽  
Vol 13 (1) ◽  
pp. 26-31 ◽  
Author(s):  
R. Mukhiya ◽  
R. Sharma ◽  
V. K. Khanna ◽  
A. Adami ◽  
L. Lorenzelli ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Ph Sensor ◽  
Effect Transistor

scholarly journals Thermal evaporation based V2O5 thin film for extended gate field effect transistor pH sensor

2020 ◽  
Vol 6 (12) ◽  
pp. 125423 ◽  
Author(s):  
N M Abd-Alghafour ◽  
Ghassan Adnan Naeem ◽  
Naser M Ahmed ◽  
Naveed Afzal ◽  
Rasim Farraj Muslim
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Thermal Evaporation ◽  
Ph Sensor ◽  
Effect Transistor

Extended Gate Field Effect Transistor Using GaN/Si Hybrids Nanostructures for pH Sensor

NANO ◽  
2017 ◽  
Vol 12 (09) ◽  
pp. 1750114 ◽  
Author(s):  
Manchen Zhang ◽  
Ruzhi Wang ◽  
Zhen Shen ◽  
Yuhang Ji
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Low Cost ◽  
Ph Sensor ◽  
Chemical Vapor ◽  
Hybrid Nanostructure ◽  
Si Nanowires ◽  
Etching Technique ◽  
Effect Transistor ◽  
Hybrid Sensors

The pH sensor of an extended gate field effect transistor (EGFET) with gallium nitride/silicon hybrid nanostructure is fabricated and analyzed. Si nanowires (NWs) are fabricated via the Ag-assisted electroless etching technique and are then covered by GaN NWs through plasma-enhanced chemical vapor deposition (PECVD). The GaN nanostructure is synthesized by introducing gallium oxide (Ga2O3) and nitrogen (N2) for the growth of NWs. The GaN nanowires supply a larger surface area than that of the pristine Si NWs, where there is a better sensitivity for pH sensor. The GaN/Silicon hybrid sensors exhibit a sensitivity higher (50.4[Formula: see text]mV/pH) than that of pristine Si NWs sensors (41.2[Formula: see text]mV/pH). This GaN/Si hybrid pH sensor prepared by simple and low-cost method may be potentially applied for cheap biosensor devices.

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