Surfactant assisted synthesis of ZnO nanostructures using atmospheric pressure microplasma electrochemical process with antibacterial applications

2018 ◽  
Vol 228 ◽  
pp. 153-159 ◽  
Author(s):  
Tariq Iqbal ◽  
Adnan Aziz ◽  
M.A. Khan ◽  
Saiqa Andleeb ◽  
Hasan Mahmood ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Electrochemical Process ◽  
Zno Nanostructures ◽  
Surfactant Assisted

Oxygen Plasma Induced ZnO-CuO Nanostructure Growth on a Brass Substrate by Atmospheric-Pressure Plasma Jet

2011 ◽  
Vol 688 ◽  
pp. 186-190 ◽  
Author(s):  
Hao Long Chen ◽  
Zin Ching Liou ◽  
Shian Jang Lin
Keyword(s):  
Plasma Treatment ◽  
Atmospheric Pressure ◽  
Atmospheric Pressure Plasma ◽  
Plasma Jet ◽  
Nano Particles ◽  
Atmospheric Pressure Plasma Jet ◽  
Zno Nanostructures ◽  
One Dimensional ◽  
Pressure Plasma ◽  
Nano Crystal

A convenient method for direct and large-area growth of one-dimensional (1-D) CuO and ZnO nanostructures on a conductive brass substrate has been developed. The ZnO and CuO nanostructures have been simultaneously induced and growth on a brass (70Cu-30Zn alloy) substrate by using an atmospheric-pressure plasma jet (APPJ) with pure oxygen as the reaction gas in an ambient environment. Various one-dimensional (1-D) nanostructures such as nano-particles, nanowires, nanobelts, nanocombs, and nanosheets have been in situ grown on the brass substrates under different plasma treatment times. The plasma power of 150W and scanning speed of sample stage 1 mm/sec with different treating times were used in plasma surface treatment processing. The nano-scaled ZnO and CuO formation and its structure were characterized by means of grazing-incidence X-ray diffraction, Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS). The results showed that the nano-scaled CuO and ZnO growth process was as follows: nano-particles, nano-crystal clusters then nano-crystal columns with increasing plasma treatment times. The growth of nano-scaled oxide formed in sequence that CuO was first grew on the brass substrate then ZnO. The morphologies of nano-scaled ZnO resembled bulbs and long-legged tetrapods. However, the morphologies of nano-scaled CuO were likely bulbs and flake nanostructures. This approach could prepare CuO and ZnO nanostructures on a brass substrate without size limitations. The possible growth mechanisms and structure of nano-scaled CuO and ZnO are discussed in this paper. The simplicity of the preparation procedure and the potential technological of the product were be interested in this study.

scholarly journals Possibility of Shape Control of ZnO Nanostructures Grown by Atmospheric-pressure CVD Utilizing Catalytic Materials

2009 ◽  
Vol 7 ◽  
pp. 78-83 ◽  
Author(s):  
Tomoaki Terasako ◽  
Daisuke Saito ◽  
Keisuke Taira ◽  
Atsushi Nishinaka ◽  
Tomoya Yamaguchi ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Shape Control ◽  
Zno Nanostructures ◽  
Catalytic Materials

EFFECT OF SURFACTANT ON THE MORPHOLOGY OF ZnO/Al:ZnO NANOSTRUCTURES AND THEIR ETHANOL SENSING APPLICATIONS AT ROOM TEMPERATURE

2016 ◽  
Vol 23 (01) ◽  
pp. 1550094 ◽  
Author(s):  
M. CHITRA ◽  
K. UTHAYARANI ◽  
N. RAJASEKARAN ◽  
N. NEELAKANDESWARI ◽  
E. K. GIRIJA ◽  
...  
Keyword(s):  
Room Temperature ◽  
Sol Gel ◽  
Zno Nanostructures ◽  
Sensing Applications ◽  
Glyoxalic Acid ◽  
Ft Ir ◽  
Ethanol Sensing ◽  
Sensing Characteristics ◽  
Surfactant Assisted ◽  
Higher Sensitivity

Zinc oxide (ZnO) and aluminum (Al) doped ZnO nanostructures with and without surfactant have been successfully prepared via sol-gel route. The effect of the surfactant glyoxalic acid and various concentration of Al on the structural property of ZnO was analyzed by X-ray powder diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR). The morphology of the samples was recorded using field emission scanning electron microscopy. The uniform distribution of ZnO nanostructures with hexagonal facets is facilitated by the surfactant and the grain growth is further inhibited by the increase in concentration of Al. The ethanol (0–300[Formula: see text]ppm) sensing characteristics of the as-prepared samples were systematically investigated at room temperature. Surfactant-assisted ZnO/Al:ZnO nanostructures show higher sensitivity of 94% at room temperature than ZnO/Al:ZnO nanostructures without surfactant. Faster response at 68[Formula: see text]s and recovery at 50[Formula: see text]s is also achieved by the samples. The surfactant-assisted ZnO nanostructures exhibit sharp selective detection towards ethanol when compared to the samples without surfactant. The enhanced ethanol sensing property may be ascribed to the larger surface area which is due to uniform and smaller crystallite size of the surfactant-assisted sample.

A High-Voltage Terminal for a Field-Emission Gun

1972 ◽  
Vol 30 ◽  
pp. 428-429
Author(s):  
N. F. Ziegler
Keyword(s):  
Field Emission ◽  
High Voltage ◽  
Atmospheric Pressure ◽  
Power Supplies ◽  
High Coherence

A high-voltage terminal has been constructed for housing the various power supplies and metering circuits required by the field-emission gun (described elsewhere in these Proceedings) for the high-coherence microscope. The terminal is cylindrical in shape having a diameter of 14 inches and a length of 24 inches. It is completely enclosed by an aluminum housing filled with Freon-12 gas at essentially atmospheric pressure. The potential of the terminal relative to ground is, of course, equal to the accelerating potential of the microscope, which in the present case, is 150 kilovolts maximum.

Scanning tunneling microscopy of E. coli RNA polymerase deposited onto an Au substrate by an electrochemical process

1991 ◽  
Vol 49 ◽  
pp. 378-379
Author(s):  
Rebecca W. Keller ◽  
Carlos Bustamante ◽  
David Bear
Keyword(s):  
Scanning Tunneling Microscope ◽  
Biological Sample ◽  
Substrate Surface ◽  
Electrochemical Process ◽  
Atomic Resolution ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Tunneling Microscope ◽  
E Coli ◽  
Preparation Techniques

Under ideal conditions, the Scanning Tunneling Microscope (STM) can create atomic resolution images of different kinds of samples. The STM can also be operated in a variety of non-vacuum environments. Because of its potentially high resolution and flexibility of operation, it is now being applied to image biological systems. Several groups have communicated the imaging of double and single stranded DNA.However, reproducibility is still the main problem with most STM results on biological samples. One source of irreproducibility is unreliable sample preparation techniques. Traditional deposition methods used in electron microscopy, such as glow discharge and spreading techniques, do not appear to work with STM. It seems that these techniques do not fix the biological sample strongly enough to the substrate surface. There is now evidence that there are strong forces between the STM tip and the sample and, unless the sample is strongly bound to the surface, it can be swept aside by the tip.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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