Study on post-deposition annealing influenced contribution of hole and electron trapping to threshold voltage stability in organic field effect transistors

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.09.038 ◽

2015 ◽

Vol 30 ◽

pp. 18-24 ◽

Author(s):

Padma N. ◽

Shilpa N. Sawant ◽

Shashwati Sen

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Voltage Stability ◽

Field Effect Transistors ◽

Electron Trapping ◽

Organic Field Effect Transistors ◽

Post Deposition Annealing ◽

Post Deposition

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Channel length influenced contribution of hole and electron trapping effect to threshold voltage stability in organic field effect transistors

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2015.05.027 ◽

2015 ◽

Vol 39 ◽

pp. 384-389 ◽

Author(s):

N. Padma

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Voltage Stability ◽

Field Effect Transistors ◽

Channel Length ◽

Electron Trapping ◽

Organic Field Effect Transistors ◽

Trapping Effect

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Investigations on Substrate Temperature-Induced Growth Modes of Organic Semiconductors at Dielectric/semiconductor Interface and Their Correlation with Threshold Voltage Stability in Organic Field-Effect Transistors

ACS Applied Materials & Interfaces ◽

10.1021/acsami.5b11349 ◽

2016 ◽

Vol 8 (5) ◽

pp. 3376-3385 ◽

Author(s):

Narayanan Padma ◽

Priya Maheshwari ◽

Debarati Bhattacharya ◽

Raj B. Tokas ◽

Shashwati Sen ◽

...

Keyword(s):

Substrate Temperature ◽

Organic Semiconductors ◽

Threshold Voltage ◽

Field Effect ◽

Voltage Stability ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Semiconductor Interface ◽

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Comparison of the role of holes and electrons in hysteresis and threshold voltage stability of organic field effect transistors

physica status solidi (a) ◽

10.1002/pssa.201329211 ◽

2013 ◽

Vol 210 (10) ◽

pp. 2111-2120 ◽

Author(s):

N. Padma ◽

Shilpa N. Sawant ◽

V. Sudarsan ◽

Shaswati Sen ◽

S. K. Gupta

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Voltage Stability ◽

Field Effect Transistors ◽

Organic Field Effect Transistors

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Effect of post-deposition annealing temperature on the charge carrier mobility and morphology of DPPDTT based organic field effect transistors

Chemical Physics Letters ◽

10.1016/j.cplett.2020.137507 ◽

2020 ◽

Vol 750 ◽

pp. 137507

Author(s):

Tahmina Afzal ◽

M. Javaid Iqbal ◽

M. Zahir Iqbal ◽

Amna Sajjad ◽

Mohsin Ali Raza ◽

...

Keyword(s):

Charge Carrier ◽

Field Effect ◽

Carrier Mobility ◽

Annealing Temperature ◽

Field Effect Transistors ◽

Charge Carrier Mobility ◽

Organic Field Effect Transistors ◽

Post Deposition Annealing ◽

Post Deposition

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Influence of active layer thickness on contribution of hole and electron trapping to threshold voltage instability in organic field effect transistors

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.06.039 ◽

2015 ◽

Vol 86 ◽

pp. 536-545 ◽

Author(s):

N. Padma ◽

Shashwati Sen ◽

V. Sudarsan ◽

C.A. Betty

Keyword(s):

Layer Thickness ◽

Active Layer ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Electron Trapping ◽

Active Layer Thickness ◽

Organic Field Effect Transistors ◽

Voltage Instability

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Influence of fine roughness of insulator surface on threshold voltage stability of organic field-effect transistors

Applied Physics Letters ◽

10.1063/1.2957987 ◽

2008 ◽

Vol 93 (3) ◽

pp. 033308 ◽

Author(s):

Kouji Suemori ◽

Sei Uemura ◽

Manabu Yoshida ◽

Satoshi Hoshino ◽

Noriyuki Takada ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Voltage Stability ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Insulator Surface

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Effects of post-deposition annealing in O2 on threshold voltage of Al2O3/AlGaN/GaN MOS heterojunction field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/aafd17 ◽

2019 ◽

Vol 58 (3) ◽

pp. 030902 ◽

Author(s):

Satoshi Nakazawa ◽

Hong-An Shih ◽

Naohiro Tsurumi ◽

Yoshiharu Anda ◽

Tsuguyasu Hatsuda ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Post Deposition Annealing ◽

Heterojunction Field Effect Transistors ◽

Post Deposition

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Threshold voltage stability of organic field-effect transistors for various chemical species in the insulator surface

Applied Physics Letters ◽

10.1063/1.2812573 ◽

2007 ◽

Vol 91 (19) ◽

pp. 192112 ◽

Author(s):

Kouji Suemori ◽

Sei Uemura ◽

Manabu Yoshida ◽

Satoshi Hoshino ◽

Noriyuki Takada ◽

...

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Voltage Stability ◽

Field Effect Transistors ◽

Chemical Species ◽

Organic Field Effect Transistors ◽

Insulator Surface

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Tuning of threshold voltage of organic field-effect transistors by space charge polarization

Applied Physics Letters ◽

10.1063/1.3086277 ◽

2009 ◽

Vol 94 (7) ◽

pp. 073304 ◽

Author(s):

Heisuke Sakai ◽

Koudai Konno ◽

Hideyuki Murata

Keyword(s):

Space Charge ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Space Charge Polarization ◽

Organic Field Effect Transistors ◽

Charge Polarization

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Control of threshold voltage of organic field-effect transistors by space charge polarization

Thin Solid Films ◽

10.1016/j.tsf.2009.07.012 ◽

2009 ◽

Vol 518 (2) ◽

pp. 510-513 ◽

Author(s):

Heisuke Sakai ◽

Koudai Konno ◽

Hideyuki Murata

Keyword(s):

Space Charge ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Space Charge Polarization ◽

Organic Field Effect Transistors ◽

Charge Polarization

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