Enhancement-mode thin film transistor using amorphous phosphorus-doped Indium–Zinc–Tin-Oxide channel layer
2022 ◽
Vol 137
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pp. 106228
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2018 ◽
Vol 18
(9)
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pp. 5913-5918
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2020 ◽
Vol 124
(49)
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pp. 26780-26792
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Vol 35
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pp. 1103-1105
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Vol 10
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pp. 155
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2011 ◽
Vol 50
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pp. 070201
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