BLISTER SUPPRESSION IN THE CO+ MOLECULE IMPLANTED SOI SUBSTRATES WITH ULTRATHIN BURIED OXIDES

2021 ◽  
pp. 102498
Author(s):  
V.P. Popov ◽  
F.V. Tikhonenko ◽  
V.A. Antonov ◽  
S.M. Tarkov ◽  
A.K. Gutakovskii ◽  
...  
Keyword(s):  
2005 ◽  
Vol 82 (3-4) ◽  
pp. 454-459 ◽  
Author(s):  
S. Zimmermann ◽  
Q.T. Zhao ◽  
B. Trui ◽  
M. Wiemer ◽  
C. Kaufmann ◽  
...  

2013 ◽  
Vol 562-565 ◽  
pp. 436-440
Author(s):  
Chao Wei Si ◽  
Guo Wei Han ◽  
Jin Ning ◽  
Wei Wei Zhong ◽  
Fu Hua Yang

A new kind of wind sensor made up of MEMS resonators is designed in the paper capable of sensing the lift, the resistance and the turbulence of airplane wings by mounting on the surface. The designed wind sensor is made up of four MEMS wind pressure gauges fixed around a square wind resistance block which used to block the wind to change the wind pressure on the surface, and the change of wind pressure is detected by MEMS wind pressure gauges to reveal the air condition on the surface of the airplane wings. As known, a MEMS resonator is a second-order resonant system whose damping factor is mainly dependent on the air pressure, and the characteristic is often used to detecting the airtightness of a sealed chamber for the damping factor is sensitive under high vacuum, while a MEMS resonator with the damping factor sensitive at atmospheric pressure is designed in this paper for sensing wind pressure change, and the MEMS resonator is manufactured on SOI substrates with deep reactive ion etching technology. Also relations between the wind pressure change and the wind speed around a block at atmosphere is revealed by finite element simulation. Compared to traditional wind sensors such as anemometers and Venturi tubes, the designed MEMS wind sensor with a very small size is suitable to mount on different zones of a wing with a large amount to monitor the air condition and have less influence on air flow.


Author(s):  
T. Signamarcheix ◽  
B. Biasse ◽  
A-M. Papon ◽  
E. Nolot ◽  
B. Ghyselen ◽  
...  

2019 ◽  
Vol 33 (4) ◽  
pp. 137-144 ◽  
Author(s):  
Tommi Suni ◽  
Riikka L. Puurunen ◽  
Oili Ylivaara ◽  
Hannu Kattelus ◽  
Kimmo Henttinen ◽  
...  
Keyword(s):  

2009 ◽  
Vol 156-158 ◽  
pp. 101-106 ◽  
Author(s):  
Douglas M. Jordan ◽  
Kanad Mallik ◽  
Robert J. Falster ◽  
Peter R. Wilshaw

The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ~180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ~5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible.


2001 ◽  
Vol 16 (1) ◽  
pp. 24-27 ◽  
Author(s):  
C. K. Moon ◽  
H. J. Song ◽  
J. K. Kim ◽  
J. H. Park ◽  
S. J. Jang ◽  
...  

Epitaxial 3C–SiC films were grown by chemical vapor deposition on the silicon-on-insulator (SOI) substrates with 20–75-nm-thick Si top layers. A relatively low growth temperature of 1150 °C and a reduced hydrogen flow rate of 1 lpm during the precarbonization process was necessary to preserve the SOI structure and thereby obtain high-quality SiC films. The transmission electron microscopy observation of the SiC/SOI structures revealed high density of misfit dislocations in the SiC film, but no dislocation within the top Si layer. The x-ray-diffraction results did not show any significant shift of the (400) SiC peak position among the SiC/Si and the SiC/SOI samples. This strongly suggests that the Si top layer is not deformed during the SiC/SOI growth and the strain within the 3C–SiC layer is not critically affected by substituting the Si substrate with the SOI substrate, even when the Si top layer is as thin as 20 nm.


2017 ◽  
Vol 111 (3) ◽  
pp. 032105 ◽  
Author(s):  
Ludovico Megalini ◽  
Bastien Bonef ◽  
Brian C. Cabinian ◽  
Hongwei Zhao ◽  
Aidan Taylor ◽  
...  

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