2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
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79
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9781728135236
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Power and Variation Improved Near-Vt Standard Cell Library for 28-nm FDSOI

2019 ◽  
Author(s):  
Wing-Tsi Wong ◽  
Kamlesh Singh ◽  
Jos Huisken ◽  
Jose Pineda de Gyvez
Keyword(s):  
Standard Cell ◽  
Standard Cell Library ◽  
Cell Library ◽  
28 Nm

High brightness and bonding yield of integrated Si-CMOS and GaN LED wafers

2019 ◽  
Author(s):  
Kwang Hong Lee ◽  
Lin Zhang ◽  
Li Zhang ◽  
Yue Wang ◽  
Kenneth Eng Kian Lee ◽  
...  
Keyword(s):  
High Brightness ◽  
Gan Led

A 9pW/bit 400mV 3T Gain-Cell eDRAM for ULP Applications in 28 nm FD-SOI

2019 ◽  
Author(s):  
Amir Shalom ◽  
Alexander Fish ◽  
Adam Teman
Keyword(s):  
28 Nm

scholarly journals New Design Principles for Cold Electronics

2019 ◽  
Author(s):  
Erik P. DeBenedictis ◽  
Michael P. Frank
Keyword(s):  
Design Principles

Group IV/oxide semiconductor bi-layer tunneling FET

2019 ◽  
Author(s):  
Shinichi Takagi ◽  
Kimihiko Kato ◽  
Mitsuru Takenaka
Keyword(s):  
Group Iv ◽  
Oxide Semiconductor ◽  
Tunneling Fet

scholarly journals Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

2019 ◽  
Author(s):  
Xiang Li ◽  
Shy-Jay Lin ◽  
DC Mahendra ◽  
Yu-Ching Liao ◽  
Chengyang Yao ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Spin Orbit ◽  
Access Memory ◽  
Magnetic Random Access Memory

Double SOI substrates for Advanced Technologies

2019 ◽  
Author(s):  
W. Schwarzenbach ◽  
G. Besnard ◽  
G. Chabanne ◽  
B.-Y. Nguyen
Keyword(s):  
Advanced Technologies ◽  
Soi Substrates
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