2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
Latest Publications

TOTAL DOCUMENTS

79

(FIVE YEARS 79)

H-INDEX

1

(FIVE YEARS 1)

Published By IEEE

9781728135236

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Power and Variation Improved Near-Vt Standard Cell Library for 28-nm FDSOI

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320687 ◽

2019 ◽

Author(s):

Wing-Tsi Wong ◽

Kamlesh Singh ◽

Jos Huisken ◽

Jose Pineda de Gyvez

Keyword(s):

Standard Cell ◽

Standard Cell Library ◽

Cell Library ◽

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High brightness and bonding yield of integrated Si-CMOS and GaN LED wafers

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320500 ◽

2019 ◽

Author(s):

Kwang Hong Lee ◽

Lin Zhang ◽

Li Zhang ◽

Yue Wang ◽

Kenneth Eng Kian Lee ◽

...

Keyword(s):

High Brightness ◽

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Effect of Vsub and Positive Charge in Buried Oxide on Super Steep SS “PN Body-Tied SOI-FET” and Proposal of CMOS without Vsub Bias

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320682 ◽

2019 ◽

Author(s):

Wataru Yabuki ◽

Jiro Ida ◽

Takayuki Mori ◽

Koichiro Ishibashi ◽

Yasuo Arai

Keyword(s):

Positive Charge ◽

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A 9pW/bit 400mV 3T Gain-Cell eDRAM for ULP Applications in 28 nm FD-SOI

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320704 ◽

2019 ◽

Author(s):

Amir Shalom ◽

Alexander Fish ◽

Adam Teman

Keyword(s):

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New Design Principles for Cold Electronics

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320751 ◽

2019 ◽

Author(s):

Erik P. DeBenedictis ◽

Michael P. Frank

Keyword(s):

Design Principles

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Group IV/oxide semiconductor bi-layer tunneling FET

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320690 ◽

2019 ◽

Author(s):

Shinichi Takagi ◽

Kimihiko Kato ◽

Mitsuru Takenaka

Keyword(s):

Group Iv ◽

Oxide Semiconductor ◽

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Negative capacitance GaN HEMT with improved subthreshold swing and transconductance

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320724 ◽

2019 ◽

Author(s):

KM. Zhu ◽

JH. Wei ◽

J. Wan

Keyword(s):

Subthreshold Swing ◽

Negative Capacitance ◽

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A Benchmark Study of Complementary-Field Effect Transistor (CFET) Process Integration Options: Comparing Bulk vs. SOI vs. DSOI starting substrates

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320683 ◽

2019 ◽

Author(s):

Benjamin Vincent ◽

J. Ervin ◽

J. Boemmels ◽

J. Ryckaert

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Process Integration ◽

Benchmark Study ◽

Effect Transistor

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Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320730 ◽

2019 ◽

Author(s):

Xiang Li ◽

Shy-Jay Lin ◽

DC Mahendra ◽

Yu-Ching Liao ◽

Chengyang Yao ◽

...

Keyword(s):

Low Power ◽

Random Access ◽

Random Access Memory ◽

Access Memory ◽

Magnetic Random Access Memory

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Double SOI substrates for Advanced Technologies

2019 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S) ◽

10.1109/s3s46989.2019.9320657 ◽

2019 ◽

Author(s):

W. Schwarzenbach ◽

G. Besnard ◽

G. Chabanne ◽

B.-Y. Nguyen

Keyword(s):

Advanced Technologies ◽

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