Semi-Insulating Silicon for Microwave Devices

The concept of fully encapsulated, semi-insulating silicon (SI-Si), Czochralski-silicon-on-insulator (CZ-SOI) substrates for silicon microwave devices is presented. Experimental results show that, using gold as a compensating impurity, a Si resistivity of order 400 kΩcm can be achieved at room temperature using lightly phosphorus doped substrates. This compares favourably with the maximum of ~180kΩcm previously achieved using lightly boron doped wafers and is due to a small asymmetry of the position of the two gold energy levels introduced into the band gap. Measurements of the temperature dependence of the resistivity of the semi-insulating material show that a resistivity ~5kΩcm can be achieved at 100°C. Thus the substrates are suitable for microwave devices working at normal operating temperatures and should allow Si to be used for much higher frequency microwave applications than currently possible.

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Light-induced Recovery of Effective Carrier Lifetime in Boron-doped Czochralski Silicon at Room Temperature

Energy Procedia ◽

10.1016/j.egypro.2016.07.071 ◽

2016 ◽

Vol 92 ◽

pp. 801-807 ◽

Cited By ~ 1

Author(s):

Hiroaki Ichikawa ◽

Isao Takahashi ◽

Noritaka Usami ◽

Katsuhiko Shirasawa ◽

Hidetaka Takato

Keyword(s):

Room Temperature ◽

Carrier Lifetime ◽

Czochralski Silicon ◽

Boron Doped ◽

Effective Carrier

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Annealing of Boron-Doped Hydrogenated Crystalline Silicon Grown at Low Temperature by PECVD

Materials ◽

10.3390/ma12223795 ◽

2019 ◽

Vol 12 (22) ◽

pp. 3795 ◽

Cited By ~ 1

Author(s):

Marta Chrostowski ◽

José Alvarez ◽

Alessia Le Donne ◽

Simona Binetti ◽

Pere Roca i Cabarrocas

Keyword(s):

Low Temperature ◽

Crystalline Silicon ◽

Chemical Vapor ◽

Dark Conductivity ◽

Silicon On Insulator ◽

Doping Profile ◽

Epitaxial Silicon ◽

High Concentration ◽

Boron Doped ◽

Soi Substrates

We investigate low-temperature (<200 °C) plasma-enhanced chemical vapor deposition (PECVD) for the formation of p–n junctions. Compared to the standard diffusion or implantation processes, silicon growth at low temperature by PECVD ensures a lower thermal budget and a better control of the doping profile. We previously demonstrated the successful growth of boron-doped epitaxial silicon layers (p+ epi-Si) at 180 °C. In this paper, we study the activation of boron during annealing via dark conductivity measurements of p+ epi-Si layers grown on silicon-on-insulator (SOI) substrates. Secondary Ion Mass Spectroscopy (SIMS) profiles of the samples, carried out to analyze the elemental composition of the p+ epi-Si layers, showed a high concentration of impurities. Finally, we have characterized the p+ epi-Si layers by low-temperature photoluminescence (PL). Results revealed the presence of a broad defect band around 0.9 eV. In addition, we observed an evolution of the PL spectrum of the sample annealed at 200 °C, suggesting that additional defects might appear upon annealing.

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Photoluminescence Characteristics of GaN Layers Grown on Soi Substrates and Relation to Material Properties

MRS Proceedings ◽

10.1557/proc-482-307 ◽

1997 ◽

Vol 482 ◽

Cited By ~ 1

Author(s):

A. Philippe ◽

C. Bru-Chevallier ◽

G. Guillot ◽

J. Cao ◽

D. Pavlidis ◽

...

Keyword(s):

Electrical Properties ◽

Material Properties ◽

Room Temperature ◽

Electronic Devices ◽

Silicon On Insulator ◽

Photoluminescence Properties ◽

High Quality ◽

Sapphire Substrates ◽

Lower Strain ◽

Soi Substrates

AbstractGaN layers were grown by MOCVD on Silicon on Insulator (SOI) substrates in an effort to improve the material quality compared to more traditionally employed sapphire substrates. Their photoluminescence properties are reported and found to exhibit an intense and relatively large PL band around 3.47eV at low temperature (7K). This is about 10meV lower than the PL energy of samples grown on sapphire substrates and suggests the presence of lower strain in the layers which is expected for compliant growth on SOI substrates. The shape of the main PL peak appears to indicate that Silicon diffusion takes place from the substrate during growth. The behavior of the PL spectra is studied as a function of temperature. The GaN films show good overall electrical properties with Hall mobilities at room temperature in the range of 150 to 300cm2/Vs and background carrier concentration from 2.9 to 3.9×1019cm−3.The promising optical and electronic features of these layers could be of great interest for the development of high quality optical and electronic devices.

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Electrical Properties of Phosphorus-Doped and Boron-Doped Nanocrystalline Germanium Thin-Films for p-i-n Devices

MRS Proceedings ◽

10.1557/proc-762-a5.7 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 4

Author(s):

William B. Jordan ◽

Sigurd Wagner

Keyword(s):

Thin Films ◽

Electrical Transport ◽

Room Temperature ◽

Solid Phase ◽

Chemical Vapor ◽

Dark Conductivity ◽

Atomic Percent ◽

Boron Doped ◽

Device Applications ◽

Phosphorus Doped

AbstractNanocrystalline germanium thin-films deposited on glass by plasma-enhanced chemical vapor deposition from germane and hydrogen were doped with phosphorus and boron. We report some electrical transport and structural properties of Ge films as a function of dopant species and doping levels. The dark conductivities of the phosphorus- and boron-doped films are approximately three to four orders of magnitude higher than the intrinsic nanocrystalline germanium. In the solid phase, phosphorus comprised about 1 atomic percent in the Ge bulk over the range of source gas ratios used, and the conductivity remained fairly constant, indicating saturated conditions. Boron comprised about 10 atomic percent in Ge at the highest dark conductivity, while increased doping turned the films amorphous. To test the doped layers for device applications, an all-nanocrystalline germanium p-i-n diode was constructed and showed rectification when measured in the dark at room temperature.

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Excitonic recombinations and energy levels of highly boron doped homoepitaxial diamond films before and after hydrogenation

Diamond and Related Materials ◽

10.1016/j.diamond.2005.01.009 ◽

2005 ◽

Vol 14 (3-7) ◽

pp. 350-354 ◽

Cited By ~ 5

Author(s):

C. Baron ◽

M. Wade ◽

A. Deneuville ◽

E. Bustarret ◽

T. Kocinievski ◽

...

Keyword(s):

Energy Levels ◽

Diamond Films ◽

Boron Doped ◽

Before And After

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Oxygen Precipitation in Heavily Phosphorus-doped Czochralski Silicon

ECS Transactions ◽

10.1149/1.3096564 ◽

2019 ◽

Vol 18 (1) ◽

pp. 1001-1011 ◽

Cited By ~ 1

Author(s):

Yuheng Zeng ◽

Deren Yang ◽

Xiangyang Ma ◽

Xinpeng Zhang ◽

Lixia Lin ◽

...

Keyword(s):

Czochralski Silicon ◽

Oxygen Precipitation ◽

Phosphorus Doped

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Effect of Thermal Annealing on Light-Induced Minority Carrier Lifetime Enhancement in Boron-Doped Czochralski Silicon

Chinese Physics Letters ◽

10.1088/0256-307x/32/10/107303 ◽

2015 ◽

Vol 32 (10) ◽

pp. 107303 ◽

Cited By ~ 1

Author(s):

Hong-Zhe Wang ◽

Song-Sheng Zheng ◽

Chao Chen

Keyword(s):

Thermal Annealing ◽

Carrier Lifetime ◽

Minority Carrier ◽

Minority Carrier Lifetime ◽

Czochralski Silicon ◽

Boron Doped ◽

Lifetime Enhancement

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Engineering silicon-on-insulator (SOI) substrates for hybrid orientation technologies (HOT)

2009 IEEE International SOI Conference ◽

10.1109/soi.2009.5318773 ◽

2009 ◽

Cited By ~ 3

Author(s):

T. Signamarcheix ◽

B. Biasse ◽

A-M. Papon ◽

E. Nolot ◽

B. Ghyselen ◽

...

Keyword(s):

Silicon On Insulator ◽

Soi Substrates

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Ba x Sr 1 − x TiO 3 Thin Films for Tunable Microwave Devices in Cryogenic and Room Temperature Application

Ferroelectrics ◽

10.1080/00150190802375383 ◽

2008 ◽

Vol 367 (1) ◽

pp. 170-178 ◽

Cited By ~ 3

Author(s):

P. M. Suherman ◽

H. T. Su ◽

T. J. Jackson ◽

F. Huang ◽

M. J. Lancaster

Keyword(s):

Thin Films ◽

Room Temperature ◽

Microwave Devices ◽

Tunable Microwave ◽

Temperature Application

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The Structure and Properties of Boundaries in Bicrystals of Boron-Doped Ni3(Al,l at% Ta)

MRS Proceedings ◽

10.1557/proc-213-423 ◽

1990 ◽

Vol 213 ◽

Author(s):

M. J. Mills ◽

S. H. Goods ◽

S. M. Foiles

Keyword(s):

Room Temperature ◽

Tensile Ductility ◽

Al Alloy ◽

Boron Doped ◽

Transmission Electron ◽

Temperature Heat ◽

Atomistic Calculations ◽

Rate Of Cooling ◽

Temperature Heat Treatment ◽

Ductile State

ABSTRACTThe effect of boron on the structure and macroscopic properties of an isolated grain boundary in bicrystals of a non-stoichiometric Ni3Al alloy (76 at% Ni, 23 at% Al, 1 at%Ta) has been studied. The room temperature tensile ductility and fracture mode of the bicrystals varies dramatically with the rate of cooling after elevated temperature heat treatment. In the absence of significant segregation of boron to the boundary, the bicrystals fail via brittle interfacial fracture with little or no ductility. When the segregation of boron to the boundary is maximized, the bicrystals are highly ductile. High resolution transmission electron microscopy reveals that this ductile state is achieved without the formation of a detectable region of compositional disorder at the boundary. Atomistic calculations using a Monte Carlo scheme predict that only partial disordering of the planes immediately adjacent to the boundary should occur for Ni-rich alloys both with and without boron. These results suggest that the presence of boron causes an increase in the cohesive energy of the boundaries rather than a change in the local compositional ordering.

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