scholarly journals Molecular size effect in the chemical sputtering of a-C:H thin films by low energy H+, , and ions

Author(s):  
P.R. Harris ◽  
F.W. Meyer ◽  
W. Jacob ◽  
T. Schwarz-Selinger ◽  
U. von Toussaint
2001 ◽  
Vol 169-170 ◽  
pp. 82-87 ◽  
Author(s):  
M.S. Altman ◽  
W.F. Chung ◽  
Z.Q. He ◽  
H.C. Poon ◽  
S.Y. Tong

Author(s):  
Elif Bilgilisoy ◽  
Rachel M. Thorman ◽  
Michael S. Barclay ◽  
Hubertus Marbach ◽  
D. Howard Fairbrother

Author(s):  
Amal Ben Hadj Mabrouk ◽  
Christophe Licitra ◽  
Antoine Chateauminois ◽  
Marc Veillerot

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
J. P. Ruf ◽  
H. Paik ◽  
N. J. Schreiber ◽  
H. P. Nair ◽  
L. Miao ◽  
...  

AbstractSuperconductivity is among the most fascinating and well-studied quantum states of matter. Despite over 100 years of research, a detailed understanding of how features of the normal-state electronic structure determine superconducting properties has remained elusive. For instance, the ability to deterministically enhance the superconducting transition temperature by design, rather than by serendipity, has been a long sought-after goal in condensed matter physics and materials science, but achieving this objective may require new tools, techniques and approaches. Here, we report the transmutation of a normal metal into a superconductor through the application of epitaxial strain. We demonstrate that synthesizing RuO2 thin films on (110)-oriented TiO2 substrates enhances the density of states near the Fermi level, which stabilizes superconductivity under strain, and suggests that a promising strategy to create new transition-metal superconductors is to apply judiciously chosen anisotropic strains that redistribute carriers within the low-energy manifold of d orbitals.


RSC Advances ◽  
2020 ◽  
Vol 10 (19) ◽  
pp. 11219-11224
Author(s):  
Wei Zhang ◽  
Xiaoxiong Jia ◽  
Rui Wang ◽  
Huihui Liu ◽  
Zhengyu Xiao ◽  
...  

Thin films with perpendicular magnetic anisotropy (PMA) play an essential role in the development of technologies due to their excellent thermal stability and potential application in devices with high density, high stability, and low energy consumption.


2021 ◽  
pp. 126323
Author(s):  
Joseph A. De Mesa ◽  
Angelo P. Rillera ◽  
Melvin John F. Empizo ◽  
Nobuhiko Sarukura ◽  
Roland V. Sarmago ◽  
...  

2002 ◽  
Vol 151-152 ◽  
pp. 189-193 ◽  
Author(s):  
G.G. Fuentes ◽  
D. Cáceres ◽  
I. Vergara ◽  
E. Elizalde ◽  
J.M. Sanz
Keyword(s):  
Ion Beam ◽  

2021 ◽  
pp. 130984
Author(s):  
Amardeep Bharti ◽  
Richa Bhardwaj ◽  
Kanika Upadhyay ◽  
Harkawal Singh ◽  
Asokan Kandasami ◽  
...  

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.


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