Effect of tunneling probability on the distortion characteristics of tunnel injection transistor laser

2020 ◽  
Vol 460 ◽  
pp. 125127
Author(s):  
S.V. Vinodhini ◽  
S. Piramasubramanian
2018 ◽  
Vol 50 (3) ◽  
Author(s):  
Neetesh Kumar ◽  
Bratati Mukhopadhyay ◽  
Rikmantra Basu

Author(s):  
Patrick P. Camus

The theory of field ion emission is the study of electron tunneling probability enhanced by the application of a high electric field. At subnanometer distances and kilovolt potentials, the probability of tunneling of electrons increases markedly. Field ionization of gas atoms produce atomic resolution images of the surface of the specimen, while field evaporation of surface atoms sections the specimen. Details of emission theory may be found in monographs.Field ionization (FI) is the phenomena whereby an electric field assists in the ionization of gas atoms via tunneling. The tunneling probability is a maximum at a critical distance above the surface,xc, Fig. 1. Energy is required to ionize the gas atom at xc, I, but at a value reduced by the appliedelectric field, xcFe, while energy is recovered by placing the electron in the specimen, φ. The highest ionization probability occurs for those regions on the specimen that have the highest local electric field. Those atoms which protrude from the average surfacehave the smallest radius of curvature, the highest field and therefore produce the highest ionizationprobability and brightest spots on the imaging screen, Fig. 2. This technique is called field ion microscopy (FIM).


2011 ◽  
Vol 50 (8) ◽  
pp. 080205
Author(s):  
Yasutaka Higa ◽  
Hiroshi Nakajima ◽  
Mikio Sorimachi ◽  
Tomoyuki Miyamoto

2011 ◽  
Vol 99 (6) ◽  
pp. 061105 ◽  
Author(s):  
F. Tan ◽  
R. Bambery ◽  
M. Feng ◽  
N. Holonyak,

2012 ◽  
Vol 9 (23) ◽  
pp. 1792-1798 ◽  
Author(s):  
Mizuki Shirao ◽  
Nobuhiko Nishiyama ◽  
Noriaki Sato ◽  
Shigehisa Arai

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