Room temperature crystallization of amorphous silicon film by ultrashort femtosecond laser pulses

2019 ◽  
Vol 112 ◽  
pp. 363-367 ◽  
Author(s):  
Xue-Peng Zhan ◽  
Meng-Yao Hou ◽  
Fu-Shuai Ma ◽  
Yue Su ◽  
Jie-Zhi Chen ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Silicon Film ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Amorphous Silicon Film ◽  
Temperature Crystallization

Structural Anisotropy of Amorphous Silicon Films Modified by Femtosecond Laser Pulses

2018 ◽  
Vol 124 (6) ◽  
pp. 801-807 ◽  
Author(s):  
D. V. Shuleiko ◽  
F. V. Kashaev ◽  
F. V. Potemkin ◽  
S. V. Zabotnov ◽  
A. V. Zoteev ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Amorphous Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Silicon Films ◽  
Structural Anisotropy

scholarly journals Фемтосекундный лазерный отжиг многослойных тонкопленочных структур на основе аморфных германия и кремния

2020 ◽  
Vol 46 (11) ◽  
pp. 43
Author(s):  
А.В. Колчин ◽  
Д.В. Шулейко ◽  
А.В. Павликов ◽  
С.В. Заботнов ◽  
Л.А. Головань ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Amorphous Silicon ◽  
Laser Annealing ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Surface Structures ◽  
Multilayered Structures ◽  
Spectra Analysis ◽  
Periodic Surface ◽  
Silicon And Germanium

Femtosecond laser annealing of thin-film multilayered structures based on amorphous silicon and germanium were studied. The original samples were synthesized via plasma-enhanced deposition on glass substrate. Scanning electron microscopy revealed formation of periodic surface structures in the irradiated films. Raman spectra analysis revealed crystallization of amorphous germanium as a result of femtosecond laser pulses action, as well as fluence-dependent mixture of the germanium and silicon layers at absence of crystallization of the amorphous silicon layers.

Nanostructure Formation in Silicon Photovoltaic Cells by Femtosecond Laser Pulses

2010 ◽  
Vol 670 ◽  
pp. 118-121 ◽  
Author(s):  
A.M. Taleb ◽  
K.A. Al-Naimee ◽  
S.F. Abdalah ◽  
Riccardo Meucci ◽  
F.T. Arecchi
Keyword(s):  
Femtosecond Laser ◽  
Room Temperature ◽  
Near Infrared ◽  
Spectral Response ◽  
Photovoltaic Cells ◽  
Laser Pulses ◽  
Photovoltaic Cell ◽  
Femtosecond Laser Pulses ◽  
Irradiation Effect ◽  
Infrared Spectral

The experimental evidence of the effect of femtosecond laser pulses on the spectral response of a Silicon photovoltaic cell is demonstrated and investigated. The response of this device is covering the visible to near infrared spectral region. The responsivity of the photovoltaic cell is enhanced from 0.18A/W (0.5A/W to 0.85 A/W) to 0.25A/W, this means that the conversion efficiency increases from about 9% to about 14% due to irradiation effect. All treatments and measurements have been done at room temperature. The observed enhancement is related to the appearing of nano-structured groves in the 700-900 nm range.

scholarly journals Crystallization of optically thick amorphous silicon films by near-IR femtosecond laser processing

2020 ◽  
Author(s):  
Kirill Bronnikov ◽  
Alexander Dostovalov ◽  
Artem Cherepakhin ◽  
Eugeny Mitsai ◽  
Alexander Nepomniaschiy ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Amorphous Silicon ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Visible Spectral Range ◽  
Ir Radiation ◽  
Optical Elements ◽  
Near Ir ◽  
Lateral Crystallization ◽  
Si Films

Amorphous silicon (α-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered as a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of α-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on utilization of near-IR radiation for laser-induced crystallization of α-Si providing no information regarding optical properties of the resultant polycrystalline Si films. The present work demonstrates efficient and gentle single-pass crystallization of α-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of α-Si and high-quality of the obtained films. Moreover, we highlight localized laser-driven crystallization of α-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.

scholarly journals Three-Dimensional Residue-Free Volume Removal inside Sapphire by High-Temperature Etching aftercmd="newline" Irradiation of Femtosecond Laser Pulses

2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
Shigeki Matsuo ◽  
Kensuke Tokumi ◽  
Takuro Tomita ◽  
Shuichi Hashimoto
Keyword(s):  
High Temperature ◽  
Femtosecond Laser ◽  
Chemical Etching ◽  
Room Temperature ◽  
Three Dimensional ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Etching Technique ◽  
Selective Chemical ◽  
Selective Chemical Etching

We applied the femtosecond laser-assisted etching technique, that is, irradiation of focused femtosecond laser pulses followed by selective chemical etching, to volume removal inside sapphire. At room temperature, volume etching only slightly advanced while residue remained inside the volume. By increasing the etching temperature, complete volume etching without residue was achieved. Complete etching was, however, accompanied by undesirable phenomena of surface pits or cracks, which are expected to be excluded through further improvement of processing.

scholarly journals Room-Temperature Electron Spin Generation by Femtosecond Laser Pulses in Colloidal CdS Quantum Dots

Materials ◽  
2013 ◽  
Vol 6 (10) ◽  
pp. 4523-4531 ◽  
Author(s):  
Haifang Tong ◽  
Donghai Feng ◽  
Xiao Li ◽  
Li Deng ◽  
Yuxin Leng ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Femtosecond Laser ◽  
Electron Spin ◽  
Room Temperature ◽  
Laser Pulses ◽  
Femtosecond Laser Pulses ◽  
Cds Quantum Dots ◽  
Temperature Electron ◽  
Colloidal Cds
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