Metal plasmonic assisted silicon-based TE0-to-TM1 mode-order converter with 3.5 μm length

2021 ◽  
Vol 142 ◽  
pp. 107251
Author(s):  
Yin Xu ◽  
Luping Liu ◽  
Xin Hu ◽  
Yue Dong ◽  
Bo Zhang ◽  
...  
Keyword(s):  
Silicon Based ◽  
Mode Order

A compact silicon-based TM0-to-TM2 mode-order converter using shallowly-etched slots

2019 ◽  
Vol 22 (1) ◽  
pp. 015802 ◽  
Author(s):  
Chenxi Zhu ◽  
Yin Xu ◽  
Yue Dong ◽  
Bo Zhang ◽  
Yi Ni
Keyword(s):  
Silicon Based ◽  
Mode Order

Design of a compact silicon-based TM-polarized mode-order converter based on shallowly etched structures

2019 ◽  
Vol 58 (33) ◽  
pp. 9075 ◽  
Author(s):  
Luping Liu ◽  
Yin Xu ◽  
Long Wen ◽  
Yue Dong ◽  
Bo Zhang ◽  
...  
Keyword(s):  
Silicon Based ◽  
Mode Order

scholarly journals Silicon-Based TM0-to-TM3 Mode-Order Converter Using On-Chip Shallowly Etched Slot Metasurface

Photonics ◽  
2021 ◽  
Vol 8 (4) ◽  
pp. 95
Author(s):  
Chenxi Zhu ◽  
Yin Xu ◽  
Zhe Kang ◽  
Xin Hu ◽  
Yue Dong ◽  
...  
Keyword(s):  
Structural Parameters ◽  
Refractive Index Distribution ◽  
Silicon Waveguide ◽  
Mode Division Multiplexing ◽  
Index Distribution ◽  
On Chip ◽  
Silicon Based ◽  
Mode Order ◽  
Multimode Applications ◽  
Fabrication Tolerance

Mode-order converters drive the on-chip applications of multimode silicon photonics. Here, we propose a TM0-to-TM3 mode-order converter by leveraging a shallowly etched slot metasurface pattern atop the silicon waveguide, rather than as some previously reported TE-polarized ones. With a shallowly etched pattern on the silicon waveguide, the whole waveguide refractive index distribution and the corresponding field evolution will be changed. Through further analyses, we have found the required slot metasurface pattern for generating the TM3 mode with high conversion efficiency of 92.9% and low modal crosstalk <−19 dB in a length of 17.73 μm. Moreover, the device’s working bandwidth and the fabrication tolerance of the key structural parameters are analyzed in detail. With these features, such devices would be beneficial for the on-chip multimode applications such as mode-division multiplexing transmission.

On-Chip Universal and Scalable Silicon-Based Mode-Order Converters by Depositing Tapered Metal Layers

2021 ◽  
Author(s):  
Yin Xu ◽  
Luping Liu ◽  
Xin Hu ◽  
Yue Dong ◽  
Bo Zhang ◽  
...  
Keyword(s):  
On Chip ◽  
Silicon Based ◽  
Metal Layers ◽  
Mode Order

Deposition of ternary silicon based compounds by CVD techniques

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  
Silicon Based

CVD mullite and mullite-alumina corrosion protection coatings for silicon based ceramics

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley
Keyword(s):  
Corrosion Protection ◽  
Silicon Based

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Photoconductivity in Vacuum Deposited Films of Silicon-Based Polymers

1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe
Keyword(s):  
Charge Transfer ◽  
Chemical Modification ◽  
Electronic Transport ◽  
Hole Transport ◽  
Electron Acceptors ◽  
Oxygen Atmosphere ◽  
Dangling Bonds ◽  
Silicon Based ◽  
Deposited Films

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.

Use of Transparent Conductive Oxide Materials with Low Indices of Refraction in Amorphous Silicon-Based Solar Cell Technology

2005 ◽  
Vol 862 ◽  
Author(s):  
Scott J. Jones ◽  
Joachim Doehler ◽  
Tongyu Liu ◽  
David Tsu ◽  
Jeff Steele ◽  
...  
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Transparent Conductive Oxide ◽  
Open Circuit ◽  
Long Term Stability ◽  
Back Reflectors ◽  
Stability Issues ◽  
Silicon Based ◽  
Solar Cell Technology

AbstractNew types of transparent conductive oxides with low indices of refraction have been developed for use in optical stacks for the amorphous silicon (a-Si) solar cell and other thin film applications. The alloys are ZnO based with Si and MgF added to reduce the index of the materials through the creation of SiO2 or MgF2, with n=1.3-1.4, or the addition of voids in the materials. Alloys with 12-14% Si or Mg have indices of refraction at λ=800nm between 1.6 and 1.7. These materials are presently being used in optical stacks to enhance light scattering by Al/multi-layer/ZnO back reflectors in a-Si based solar cells to increase light absorption in the semiconductor layers and increase open circuit currents and boost device efficiencies. In contrast to Ag/ZnO back reflectors which have long term stability issues due to electromigration of Ag, these Al based back reflectors should be stable and usable in manufactured PV products. In this manuscript, structural properties for the materials will be reported as well as the performance of solar cell devices made using these new types of materials.

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