A simple and transparent well-aligned ZnO nanowire array ultraviolet photodetector with high responsivity

2018 ◽  
Vol 80 ◽  
pp. 149-153 ◽  
Author(s):  
Lei Yin ◽  
Hesheng Ding ◽  
Zhaolin Yuan ◽  
Wendeng Huang ◽  
Chunjiang Shuai ◽  
...  
Keyword(s):  
Nanowire Array ◽  
Ultraviolet Photodetector ◽  
Zno Nanowire ◽  
High Responsivity

Broadband Ultraviolet Photodetector Based on Vertical Ga 2 O 3 /GaN Nanowire Array with High Responsivity

2019 ◽  
Vol 7 (7) ◽  
pp. 1801563 ◽  
Author(s):  
Tao He ◽  
Xiaodong Zhang ◽  
Xiaoyu Ding ◽  
Chi Sun ◽  
Yukun Zhao ◽  
...  
Keyword(s):  
Nanowire Array ◽  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Gan Nanowire

Synthesis of Self-Supporting ZnO Nanowire Array Film and its Optical Property and Room Temperature Ferromagnetism

2021 ◽  
Vol 1036 ◽  
pp. 45-52
Author(s):  
Jiao Yang ◽  
Xin Yu Wang ◽  
Peng Kai Li ◽  
Ji Fa Huang ◽  
Peng Hao Deng
Keyword(s):  
Exposure Time ◽  
Room Temperature ◽  
Surface Defects ◽  
Room Temperature Ferromagnetism ◽  
Nanowire Array ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Vertical Orientation ◽  
Vibration Sample Magnetometer ◽  
The Relationship

X-ray diffractometer, field emission scanning electron microscope (SEM, Hitachi S-4800), laser confocal micro-region Raman spectrometer and vibration sample magnetometer were used to systematically study the effects of polyethyleneimine concentrations and exposure time on the morphology and size of ZnO nanowire arrays. The photoelectric property and the relationship between the morphology of nanowire arrays and ferromagnetism at room temperature were also analyzed. Under 15 min exposure time, when the polyethyleneimine concentration is 2.25 g / L, the obtained ZnO nanowire array film exhibits the smallest size, the optimal density and vertical orientation. According to the study of luminescence and room temperature magnetism, it is shown that the optical and ferromagnetic property are related to the variation tendency of oxygen defects and surface defects of the ZnO nanowires.

Realization of in-Plane GaN Microwire Array Based Ultraviolet Photodetector with High Responsivity on a Si(100) Substrate

ACS Photonics ◽  
2018 ◽  
Vol 5 (12) ◽  
pp. 4810-4816 ◽  
Author(s):  
Dexiao Guo ◽  
Xingfu Wang ◽  
Hu Wang ◽  
Weidong Song ◽  
Hang Chen ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
High Responsivity

High responsivity, fast ultraviolet photodetector fabricated from ZnO nanoparticle–graphene core–shell structures

Nanoscale ◽  
2013 ◽  
Vol 5 (9) ◽  
pp. 3664 ◽  
Author(s):  
Dali Shao ◽  
Mingpeng Yu ◽  
Hongtao Sun ◽  
Tao Hu ◽  
Jie lian ◽  
...  
Keyword(s):  
Shell Structures ◽  
Core Shell ◽  
Zno Nanoparticle ◽  
Ultraviolet Photodetector ◽  
High Responsivity

scholarly journals Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction

Nanophotonics ◽  
2018 ◽  
Vol 7 (9) ◽  
pp. 1557-1562 ◽  
Author(s):  
Tao He ◽  
Yukun Zhao ◽  
Xiaodong Zhang ◽  
Wenkui Lin ◽  
Kai Fu ◽  
...  
Keyword(s):  
Response Times ◽  
Nanowire Array ◽  
Graphene Film ◽  
Fast Response ◽  
Nanowire Arrays ◽  
Monolayer Graphene ◽  
Ultraviolet Photodetector ◽  
Solar Blind ◽  
Decay Times ◽  
First Time

AbstractIn this paper, a solar-blind ultraviolet photodetector (PD) based on the graphene/vertical Ga2O3 nanowire array heterojunction was proposed and demonstrated. To the best of our knowledge, it is the first time that vertical Ga2O3 nanowire arrays have been realized. Ga2O3 nanowires were obtained by thermally oxidizing GaN nanowires grown by molecular beam epitaxy on n-doped Si substrate. Then, a monolayer graphene film was transferred to Ga2O3 nanowires to form the graphene/vertical Ga2O3 nanowire array heterojunction and transparent electrodes. The fabricated device exhibited a responsivity (R) of 0.185 A/W and rejection ratio (R258 nm/R365 nm) of 3×104 at the bias of −5 V. Moreover, the fast response times of this PD were 9 and 8 ms for the rise and decay times under 254 nm illumination, respectively, which are attributed to the unique properties of nanowire arrays and the graphene/vertical Ga2O3 nanowire array heterojunction structure.

Cubic MgZnO Deep-ultraviolet Photodetector with High Responsivity

2014 ◽  
Vol 35 (11) ◽  
pp. 1291-1296
Author(s):  
郑剑 ZHENG Jian ◽  
乔倩 QIAO Qian ◽  
张振中 ZHANG Zhen-zhong ◽  
王立昆 WANG Li-kun ◽  
韩舜 HAN Shun ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
High Responsivity ◽  
Deep Ultraviolet

Ultrasensitive Fiber-Based ZnO Nanowire Network Ultraviolet Photodetector Enabled by the Synergism between Interface and Surface Gating Effects

2019 ◽  
Vol 12 (1) ◽  
pp. 1054-1060 ◽  
Author(s):  
Leixin Meng ◽  
Gaoda Li ◽  
Xiaoqiang Tian ◽  
Suo Bai ◽  
Qi Xu ◽  
...  
Keyword(s):  
Ultraviolet Photodetector ◽  
Zno Nanowire ◽  
Nanowire Network

High Responsivity of InP/InAsP Nanowire Array Broadband Photodetectors Enhanced by Optical Gating

Nano Letters ◽  
2019 ◽  
Vol 19 (12) ◽  
pp. 8424-8430
Author(s):  
Mohammad Karimi ◽  
Xulu Zeng ◽  
Bernd Witzigmann ◽  
Lars Samuelson ◽  
Magnus T. Borgström ◽  
...  
Keyword(s):  
Nanowire Array ◽  
High Responsivity ◽  
Optical Gating

Sulfuration–desulfuration reaction sensing effect of intrinsic ZnO nanowires for high-performance H2S detection

2015 ◽  
Vol 3 (12) ◽  
pp. 6330-6339 ◽  
Author(s):  
Haiyun Huang ◽  
Pengcheng Xu ◽  
Dan Zheng ◽  
Chuanzhao Chen ◽  
Xinxin Li
Keyword(s):  
Theoretical Analysis ◽  
Material Characterization ◽  
High Performance ◽  
Nanowire Array ◽  
Zno Nanowires ◽  
The Novel ◽  
Zno Nanowire ◽  
Trace Level ◽  
Designed Experiments ◽  
H2s Detection

This study presents a novel sulfuration–desulfuration sensing effect of an intrinsic (i.e., uncatalyzed) ZnO nanowire array for trace-level detection of H2S. The novel H2S sensing mechanism is clarified by specifically designed experiments, material characterization and theoretical analysis.

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