Demonstration of High-Performance 4H-SiC MISIM Ultraviolet Photodetector With Operation Temperature of 550 °C and High Responsivity

Author(s):  
Fengyu Du ◽  
Qingwen Song ◽  
Xiaoyan Tang ◽  
Zeyulin Zhang ◽  
Hao Yuan ◽  
...  
2018 ◽  
Vol 6 (2) ◽  
pp. 299-303 ◽  
Author(s):  
Ranran Zhuo ◽  
Yuange Wang ◽  
Di Wu ◽  
Zhenhua Lou ◽  
Zhifeng Shi ◽  
...  

Self-powered MoS2/GaN p–n heterojunction photodetectors exhibited high sensitivity to deep-UV light with high responsivity, specific detectivity and fast response speeds.


Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2123 ◽  
Author(s):  
Wenli Li ◽  
Yong Zhang ◽  
Xia Long ◽  
Juexian Cao ◽  
Xin Xin ◽  
...  

The unique properties of MoS2 nanosheets make them a promising candidate for high-performance room temperature gas detection. Herein, few-layer MoS2 nanosheets (FLMN) prepared via mechanical exfoliation are coated on a substrate with interdigital electrodes for room-temperature NO2 detection. Interestingly, compared with other NO2 gas sensors based on MoS2, FLMN gas sensors exhibit high responsivity for room-temperature NO2 detection, and NO2 is easily desorbed from the sensor surface with an ultrafast recovery behavior, with recovery times around 2 s. The high responsivity is related to the fact that the adsorbed NO2 can affect the electron states within the entire material, which is attributed to the very small thickness of the MoS2 nanosheets. First-principles calculations were carried out based on the density functional theory (DFT) to verify that the ultrafast recovery behavior arises from the weak van der Waals binding between NO2 and the MoS2 surface. Our work suggests that FLMN prepared via mechanical exfoliation have a great potential for fabricating high-performance NO2 gas sensors.


2017 ◽  
Vol 41 (12) ◽  
pp. 4901-4907 ◽  
Author(s):  
Hai Zhou ◽  
Pengbin Gui ◽  
Lu Yang ◽  
Cong Ye ◽  
Mengni Xue ◽  
...  

A self-powered photodetector based on a ZnO nanoarrays/CdS/GaN structure with a responsivity as high as 176 mA W−1 at 300 nm.


ACS Photonics ◽  
2018 ◽  
Vol 5 (12) ◽  
pp. 4810-4816 ◽  
Author(s):  
Dexiao Guo ◽  
Xingfu Wang ◽  
Hu Wang ◽  
Weidong Song ◽  
Hang Chen ◽  
...  

2015 ◽  
Vol 3 (3) ◽  
pp. 596-600 ◽  
Author(s):  
Jiangxin Wang ◽  
Chaoyi Yan ◽  
Meng-Fang Lin ◽  
Kazuhito Tsukagoshi ◽  
Pooi See Lee

An all-NW ultraviolet photodetector with high photoresponse and improved switching time was fabricated by a solution assembly method.


Nanoscale ◽  
2013 ◽  
Vol 5 (9) ◽  
pp. 3664 ◽  
Author(s):  
Dali Shao ◽  
Mingpeng Yu ◽  
Hongtao Sun ◽  
Tao Hu ◽  
Jie lian ◽  
...  

2018 ◽  
Vol 273 ◽  
pp. 182-188 ◽  
Author(s):  
Jihye Lee ◽  
Eun-Hwan Jang ◽  
Won Seok Chang ◽  
Sohee Jeong ◽  
Eungsug Lee ◽  
...  

Author(s):  
Jia-Yun Wei ◽  
Liang-Ping Shen ◽  
Zhuo-Cheng Zheng ◽  
Yong-Chang Xu ◽  
Hao Wu ◽  
...  

2020 ◽  
Vol 1014 ◽  
pp. 131-136
Author(s):  
Chun Hong Zeng ◽  
Yong Jian Ma ◽  
Bao Shun Zhang ◽  
Ya Meng Xu ◽  
Mei Kong

Broadband ultraviolet (BUV) photodetectors are widely used in military and civil fields. A high performance BUV photodetector based on graphene/β-Ga2O3/GaN heterojunction is proposed and realized by semiconductor micro-fabrication techniques in this paper. The β-Ga2O3 and GaN films are grown by metal organic chemical vapor deposition (MOCVD), and the graphene is also used as a transparent electrode. The device exhibits a broad response band from 230 nm to 368 nm with responsivity exceeding 0.4A/W at -5 V bias voltage and a peak responsivity of 0.53 A/W at 256 nm. These performances can be attributed to the internal gain mechanism of graphene/β-Ga2O3/GaN heterojunction and the optical properties of graphene. Our work provides an efficient method to realize a high-performance BUV photodetector for photoelectric applications.


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