Numerical simulation and performance optimization of Sb2S3 solar cell with a hole transport layer

2020 ◽  
Vol 108 ◽  
pp. 110414 ◽  
Author(s):  
Youpeng Xiao ◽  
Huaiping Wang ◽  
Hai Kuang
2021 ◽  
Author(s):  
F Ayala-Mato ◽  
O Vigil-Galán ◽  
Maykel Courel ◽  
M. M. Nicolás-Marín

Abstract Antimony Sulfide (Sb2Se3) Solar Cells are considered a promising emerging photovoltaic devices technology. However, the best reported experimental efficiency (9.2%) is well below the theoretical limit of 30%. In this research is demonstrated, by numerical simulation, that using different buffer or electron transport layers (ETL) and device structures (n-p or n-i-p) can significantly increase the solar cell performance. The study is based on two underlying considerations: the use of inorganic materials to facilitate the manufacturing process and the analysis of the simulation parameters that adjust to the experimental conditions in which the cells can be processed. In the n-p structures, the use of single layers and bilayers as ETL was evaluated and the possible mechanism that explain the electrical parameters of the solar cell were discussed. Especial attention was made in the role of interfacial state density and band alignment in the ETL/Sb2Se3 interface. In addition, the n-i-p structure was studied by adding a hole transport layer (HTL). An improvement in open circuit voltage (Voc) is observed compared with n-p structure. Finally, the behavior of Voc and efficiency vs thickness of the ETL and Sb2Se3 layers was analyzed. The results show that using alternative ETLs a significant improve in Voc and efficiency could be achieved for n-p and n-i-p structures. After thickness optimization and taking account a moderate interface defect density, values of Voc and efficiency higher than 600 mV and 15 % were respectively obtained.


2021 ◽  
Author(s):  
Atul kumar

Abstract Fill factor (FF) deficit and stability is a primary concern with the perovskite solar cell. Resistance values and band alignment at junction interface in perovskite are causing low fill factor. Moisture sensitivity of methylammonium lead halide perovskite is causing a stability issue. We tried to solve these issues by using inorganic hole transport layer (HTL). FF is sensitive to the band offset values. We study the band alignment/band offset effect at the Perovskite /HTL junction. Inorganic material replacing Spiro-MeOTAD can enhance the stability of the device by providing an insulation from ambient. Our simulation study shows that the earth abundant p-type chalcogenide materials of SnS as HTL in perovskite is comparable to Spiro-MeOTAD efficiency.


Author(s):  
Seyyedreza HOSSEİNİ ◽  
Nagihan DELİBAŞ ◽  
Mahsa BAHRAMGOUR ◽  
Alireza TABATABAEİ MASHAYEKH ◽  
Aligholi NİAİE

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Jeongmin Lim ◽  
Seong Young Kong ◽  
Yong Ju Yun

Inorganic-organic mesoscopic solar cells become a promising alternative for conventional solar cells. We describe a CH3NH3PbI3 perovskite-sensitized solid-state solar cells with the use of different polymer hole transport materials such as 2,2′,7,7′-tetrakis-(N,N-di-p-methoxyphenyl-amine)-9,9′-spirobifluorene (spiro-OMeTAD), poly(3-hexylthiophene-2,5-diyl) (P3HT), and poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediyl]] (PTB7). The device with a spiro-OMeTAD-based hole transport layer showed the highest efficiency of 6.9%. Interestingly, the PTB7 polymer, which is considered an electron donor material, showed dominant hole transport behaviors in the perovskite solar cell. A 200 nm thin layer of PTB7 showed comparatively good efficiency (5.5%) value to the conventional spiro-OMeTAD-based device.


2018 ◽  
Vol 3 (5) ◽  
pp. 1122-1127 ◽  
Author(s):  
Lukas Wagner ◽  
Sijo Chacko ◽  
Gayathri Mathiazhagan ◽  
Simone Mastroianni ◽  
Andreas Hinsch

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