ABSTRACTSilicon powders have been successfully deposited by a corona discharge assisted electrostatic process on insulating, semiconducting, and conducting substrates. Subsequently, the deposits were heat treated and films have been formed. We present data pertatining to silicon films on insulators. The insulating surfaces used were sapphire, SiO2 on Si, and Si3N4 on Si. The electrical, chemical, and physical characteristics of these films are presented along with the time and temperature effects on the film formation. The impact of the above method with emphasis to the microelectronics industry will be discussed.
Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films
