The high refractive index of Gd2O3 thin films obtained by magnetron sputtering

Aluminium doped zinc oxide (AZO) thin films were prepared by magnetron-sputtering. The optical and structural properties of the films were investigated by optical transmission spectra and X-ray diffraction (XRD) measurements, respectively. The results indicate that the AZO films have hexagonal wurtzite structure with highly c-axis preferred orientation. The optical and structural properties of the films are observed to be subjected to the argon pressure. The AZO film prepared at the argon pressure of 0.5 Pa exhibits the largest crystallite size and the highest average visible transmittance. Also, the refractive index and optical energy-gap of the films were determined by optical characterization methods. The dispersion behavior of the refractive index was studied using the Sellmeier’s dispersion model.

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The Influence of Bi Content on the Properties of Bismuth Ferrite Thin Films Fabricated by Magnetron Sputtering

Materials Science Forum ◽

10.4028/www.scientific.net/msf.745-746.131 ◽

2013 ◽

Vol 745-746 ◽

pp. 131-135

Author(s):

Hu Rui Yan ◽

Nuo Fan Ding ◽

Gang Wu ◽

Ping Xiong Yang ◽

Jun Hao Chu ◽

...

Keyword(s):

Thin Films ◽

Refractive Index ◽

Magnetron Sputtering ◽

Extinction Coefficient ◽

Energy Gap ◽

Lattice Mismatch ◽

Bismuth Ferrite ◽

Film Surface ◽

Si Substrate ◽

Impurity Phases

In the process of BiFeO3 film preparation by magnetron sputtering, Bi element is volatile, leading to the films which often appear impurity phases. Therefore, Both Bi excessive 5% (B1.05FO) and 8% (B1.08FO) BFO film in Si substrate were prepared by magnetron sputtering. X-Ray Diffraction (XRD) results showed that the BFO thin films fabricated in the Si substrate are perovskite structure, that the B1.08FO film appeared less impurity phases than B1.05FO film, and that stress due to substrate lattice mismatch caused the shift of XRD patterns. In Raman study, it was concluded that both B1.08FO film and B1.05FO film appeared ten Raman peaks in the range from 50cm-1 to 800cm-1, and that B1.08FO Raman peaks intensity was stronger in 137.1cm-1.168.5cm-1 and 215.3cm-1. Spectroscopic ellipsometry test showed that the refractive index and the extinction coefficient of B1.05FO film were 2.25 and 0.07 respectively in 600 nm with 2.67eV of energy gap; the refractive index and the extinction coefficient of B1.08FO film were 2.14 and 0.05 in 600 nm respectively with 2.71eV of energy gap. Atomic Force Microscope (AFM) was used to characterize the film surface morphology, finding that the B1.08FO film prepared in Si substrate was denser while grain size and surface roughness were smaller.

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Highly transparent o-PDA functionalized ZnS-polymer nanocomposite thin films with high refractive index

Materials Letters ◽

10.1016/j.matlet.2007.11.065 ◽

2008 ◽

Vol 62 (15) ◽

pp. 2249-2252 ◽

Cited By ~ 23

Author(s):

M. Habib Ullah ◽

Jin-Hoe Kim ◽

Chang-Sik Ha

Keyword(s):

Thin Films ◽

Refractive Index ◽

Polymer Nanocomposite ◽

High Refractive Index ◽

Nanocomposite Thin Films

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Preparation and Character Measurements of AlN Films for RF Magnetron Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.663.409 ◽

2013 ◽

Vol 663 ◽

pp. 409-412

Author(s):

Tai Long Gui ◽

Si Da Jiang ◽

Chun Cheng Ban ◽

Jia Qing Liu

Keyword(s):

Crystal Structure ◽

Thin Films ◽

Refractive Index ◽

Magnetron Sputtering ◽

Total Pressure ◽

Rf Magnetron Sputtering ◽

Elliptical Polarization ◽

Dielectric Thin Films ◽

Temperature Changes ◽

Sputtering Power

AlN dielectric thin films were deposited on N type Si(100) substrate by reactive radio frequency magnetron sputtering that directly bombardment AlN target under different sputtering-power and total pressure. The crystal structure,composition,surface and refractive index of the thin films were studied by XRD, SEM, AFM and elliptical polarization instrument. The results show that the surface and refractive of the thin films strongly depends on the sputtering-power and total pressure,the good uniformity and smoothness is found at 230 W, Ar flow ratio 5.0 LAr/sccm, substrate temperature 100°Cand 1.2 Pa. The crystal structure of the as-deposited thin-films is amorphous，then it transforms from blende structure to wurtzite structure as the rapid thermal annealing(RTA) temperature changes from 600 to 1200°C. The refractive index also increases with the RTA temperature it is increasing significantly from 800 to 1000°C．

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Effect of Argon Gas Pressure on Optical Properties of Zinc Oxide Thin Films Deposited by RF Magnetron Sputtering Technique

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.904.205 ◽

2014 ◽

Vol 904 ◽

pp. 205-208

Author(s):

J.H. Gu ◽

Z.Y. Zhong ◽

S.B. Chen ◽

C.Y. Yang ◽

J. Hou

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Refractive Index ◽

Optical Properties ◽

Magnetron Sputtering ◽

Optical Band Gap ◽

Rf Magnetron Sputtering ◽

Gas Pressure ◽

Argon Gas ◽

Deposited Films

Zinc oxide (ZnO) thin films were deposited by radio frequency (RF) magnetron sputtering technique on glass substrates in pure argon gas. The optical transmission stectra of the films were measured by ultraviolet-visible spectrophotometer. The effects of argon gas pressure on optical properties of the deposited films were investigated. The optical band-gap of the films was evaluated in terms of the Taucs law. The results show that the argon gas pressure has slightly affected the optical band-gap of the deposited films. Furthermore, the refractive index and extinction coefficient of the films were determined by means of the optical characterization methods. Meanwhile, the dispersion behavior of the refractive index was studied by the single-oscillator model of Wemple and DiDomenico, and the physical parameters of the average oscillator strength, average oscillator wavelength, oscillator energy, the refractive index dispersion parameter and the dispersion energy were obtained.

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