Atomic layer deposited HfO2 gate dielectrics for low-voltage operating, high-performance poly-(3-hexythiophene) organic thin-film transistors
2010 ◽
Vol 11
(11)
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pp. 1719-1722
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Keyword(s):
2015 ◽
Vol 2
(2)
◽
pp. 1500209
◽
Keyword(s):
Keyword(s):
2014 ◽
Vol 15
(11)
◽
pp. 3259-3267
◽
Keyword(s):
2009 ◽
Vol 1
(10)
◽
pp. 2230-2236
◽