Tail states recombination limit of the open circuit voltage in bulk heterojunction organic solar cells

2012 ◽  
Vol 13 (2) ◽  
pp. 230-234 ◽  
Author(s):  
Ling Li ◽  
Jang Hyuk Kwon ◽  
Jin Jang
2006 ◽  
Vol 88 (7) ◽  
pp. 073514 ◽  
Author(s):  
Kenji Kawano ◽  
Norihiro Ito ◽  
Taisuke Nishimori ◽  
Jun Sakai

2017 ◽  
Vol 5 (44) ◽  
pp. 23067-23077 ◽  
Author(s):  
Keisuke Ogumi ◽  
Takafumi Nakagawa ◽  
Hiroshi Okada ◽  
Ryohei Sakai ◽  
Huan Wang ◽  
...  

Acceptor–donor–acceptor conjugated magnesium porphyrins showed a power conversion efficiency of 5.73%, high open-circuit voltage of 0.79 V, or an extended incident photon-to-current conversion efficiency spectrum to 1100 nm, depending on the substituents.


2013 ◽  
Vol 135 (3) ◽  
pp. 986-989 ◽  
Author(s):  
Robert A. Street ◽  
Daniel Davies ◽  
Petr P. Khlyabich ◽  
Beate Burkhart ◽  
Barry C. Thompson

RSC Advances ◽  
2015 ◽  
Vol 5 (5) ◽  
pp. 3381-3385 ◽  
Author(s):  
Hung-Yang Chen ◽  
Jan Golder ◽  
Shih-Chieh Yeh ◽  
Chiao-Wen Lin ◽  
Chao-Tsen Chen ◽  
...  

An all carbon non-fullerene electron acceptor material based on diindeno[1,2-g:1′,2′-s]rubicene (DIR) was readily synthesized and processed for bulk-heterojunction organic solar cells.


2015 ◽  
Vol 17 (40) ◽  
pp. 26580-26588 ◽  
Author(s):  
Thaksen Jadhav ◽  
Rajneesh Misra ◽  
S. Biswas ◽  
Ganesh D. Sharma

The power conversion efficiency of an optimized3a:PC71BM active layer based device is 5.05%.


2014 ◽  
Vol 92 (10) ◽  
pp. 932-939 ◽  
Author(s):  
Ala’a F. Eftaiha ◽  
Jon-Paul Sun ◽  
Arthur D. Hendsbee ◽  
Casper Macaulay ◽  
Ian G. Hill ◽  
...  

We have recently reported on a small organic molecule containing a bithiophene core with end-capping phthalimide units (PthTh2Pth) that exhibited a H-aggregation tendency in the solid state and high electron mobility in organic field effect transistors. In this contribution, we have studied both the physical and electrical properties of poly(3-hexylthiophene) (P3HT) and PthTh2Pth thin films by measuring the optical absorption, Frontier molecular orbital energy levels, photoluminescence quenching, thermal properties, and photovoltaic response. Our results have provided a useful insight into the use of PthTh2Pth as an electron acceptor material for organic photovoltaic applications. In comparison with high-performance, fullerene-based, solution-processed bulk heterojunction solar cells reported in the literature, a relatively high open circuit voltage (∼0.94 V) was obtained for various donor–acceptor blend ratios. These results highlight the potential for PthTh2Pth to act as an alternative to fullerenes as acceptors in organic solar cell devices.


2019 ◽  
Vol 12 (03) ◽  
pp. 1950022 ◽  
Author(s):  
Yuming Liang ◽  
Ping Deng ◽  
Zhongtao Wang ◽  
Zhiyong Guo ◽  
Yanlian Lei

Nonfullerene electron acceptor materials have gained enormous attention due to their potential as replacements of fullerene electron acceptors in bulk heterojunction organic solar cells. A novel thiophene bridged selenophene-containing perylene diimide acceptor PDISe-T has been synthesized and applied as an acceptor in nonfullerene organic photovoltaic cells. The inverted organic photovoltaic (OPV) solar cells based on PDISe-T:PBT7-Th (acceptor:donor) blends give a power conversion efficiency (PCE) value of 2.53% with an open-circuit voltage ([Formula: see text] of 0.92[Formula: see text]V, a [Formula: see text] of 6.55[Formula: see text]mA[Formula: see text]cm[Formula: see text], and a fill factor (FF) of 0.42.


2011 ◽  
Vol 1360 ◽  
Author(s):  
Yang Shen ◽  
Louis Scudiero ◽  
Mool C. Gupta

ABSTRACTIn this study, the open circuit voltage (VOC) of poly (3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) bulk heterojunction (BHJ) organic solar cells was measured at temperatures ranging from 300 K to 400 K. The temperature dependence of the vacuum shift and of the highest occupied molecular orbital (HOMO) energy level of P3HT and PCBM were measured by ultraviolet photoelectron spectroscopy (UPS) in the same temperature range. The temperature dependence of the absorption edge was also studied in the same temperature range to obtain the temperature variation of the optical band gap energy (Eg). The measured VOC of the devices showed a clear decreasing trend with increasing operating temperature and the total decrease was found to be about 0.1 V. Although the origin of VOC is still not fully understood it is generally believed that the energy level offset between the HOMO of the donor and the LUMO of the acceptor minus the exciton binding energy (0.3 eV) directly determines the value of VOC. However, by utilizing the measured values of the HOMO for the P3HT (donor) and of the LUMO for the PCBM (acceptor), we have found that the calculated values of VOC and its temperature dependence do not agree with the measured VOC values. This indicates that factors other than the offset between the HOMO of the donor and the LUMO of the acceptor materials are impacting VOC.


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