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Restraints in low dimensional organic semiconductor devices at high current densities
Organic Electronics
◽
10.1016/j.orgel.2013.10.026
◽
2014
◽
Vol 15
(1)
◽
pp. 211-215
◽
Cited By ~ 1
Author(s):
Raphael Pfattner
◽
César Moreno
◽
Cristobal Voz
◽
Ramón Alcubilla
◽
Concepció Rovira
◽
...
Keyword(s):
Organic Semiconductor
◽
Semiconductor Devices
◽
High Current
◽
Organic Semiconductor Devices
◽
Current Densities
◽
Low Dimensional
Download Full-text
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High current conduction with high mobility by non-radiative charge recombination interfaces in organic semiconductor devices
Organic Electronics
◽
10.1016/j.orgel.2012.02.008
◽
2012
◽
Vol 13
(6)
◽
pp. 939-944
◽
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Author(s):
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◽
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◽
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◽
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Keyword(s):
Organic Semiconductor
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Semiconductor Devices
◽
High Mobility
◽
Charge Recombination
◽
High Current
◽
Current Conduction
◽
Organic Semiconductor Devices
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Metal-Oxides Hole Injection/Extraction Layer in Organic Semiconductor Devices
ECS Transactions
◽
10.1149/1.3641392
◽
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◽
Vol 35
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◽
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◽
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◽
Organic Semiconductor
◽
Semiconductor Devices
◽
Hole Injection
◽
Organic Semiconductor Devices
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Magnetoresistance and Spin Transport in Organic Semiconductor Devices
Organic Spintronics
◽
10.1201/ebk1439806562-4
◽
2010
◽
pp. 67-136
Author(s):
M Wohlgenannt
◽
P Bobbert
◽
B Koopmans
◽
F Bloom
Keyword(s):
Organic Semiconductor
◽
Spin Transport
◽
Semiconductor Devices
◽
Organic Semiconductor Devices
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Interface Formation in Organic Semiconductor Devices
Photonic Polymer Systems
◽
10.1201/9781482269970-7
◽
1998
◽
pp. 165-196
Keyword(s):
Organic Semiconductor
◽
Semiconductor Devices
◽
Interface Formation
◽
Organic Semiconductor Devices
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On the minimum thickness of doped electron/hole transport layers in organic semiconductor devices
Journal of Applied Physics
◽
10.1063/5.0060429
◽
2021
◽
Vol 130
(12)
◽
pp. 125502
Author(s):
D. Oussalah
◽
R. Clerc
◽
J. Baylet
◽
R. Paquet
◽
C. Sésé
◽
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Keyword(s):
Organic Semiconductor
◽
Semiconductor Devices
◽
Hole Transport
◽
Minimum Thickness
◽
Electron Hole
◽
Hole Transport Layers
◽
Organic Semiconductor Devices
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Influence of Polarity of Polarization Charge Induced by Spontaneous Orientation of Polar Molecules on Electron Injection in Organic Semiconductor Devices
IEICE Transactions on Electronics
◽
10.1587/transele.2018oms0014
◽
2019
◽
Vol E102.C
(2)
◽
pp. 172-175
◽
Cited By ~ 1
Author(s):
Yuya TANAKA
◽
Takahiro MAKINO
◽
Hisao ISHII
Keyword(s):
Organic Semiconductor
◽
Semiconductor Devices
◽
Electron Injection
◽
Polar Molecules
◽
Polarization Charge
◽
Organic Semiconductor Devices
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Graphene-passivated nickel as an efficient hole-injecting electrode for large area organic semiconductor devices
Applied Physics Letters
◽
10.1063/5.0002222
◽
2020
◽
Vol 116
(16)
◽
pp. 163301
◽
Cited By ~ 1
Author(s):
Daniele Di Nuzzo
◽
Ryo Mizuta
◽
Kenichi Nakanishi
◽
Marie-Blandine Martin
◽
Adrianus I. Aria
◽
...
Keyword(s):
Organic Semiconductor
◽
Semiconductor Devices
◽
Large Area
◽
Organic Semiconductor Devices
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The effect of intermediate layers on the internal electric field in organic semiconductor devices
10.1117/12.662885
◽
2006
◽
Cited By ~ 1
Author(s):
Christoph Lungenschmied
◽
Gilles Dennler
◽
Eitan Ehrenfreund
◽
Helmut Neugebauer
◽
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Keyword(s):
Electric Field
◽
Organic Semiconductor
◽
Semiconductor Devices
◽
Internal Electric Field
◽
Intermediate Layers
◽
Organic Semiconductor Devices
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Metal electrode effects on spin-orbital coupling and magnetoresistance in organic semiconductor devices
Applied Physics Letters
◽
10.1063/1.2387118
◽
2006
◽
Vol 89
(20)
◽
pp. 203510
◽
Cited By ~ 39
Author(s):
Yue Wu
◽
Bin Hu
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◽
Semiconductor Devices
◽
Metal Electrode
◽
Spin Orbital
◽
Organic Semiconductor Devices
◽
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Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices
Solid-State Electronics
◽
10.1016/j.sse.2006.04.032
◽
2006
◽
Vol 50
(6)
◽
pp. 1097-1104
◽
Cited By ~ 5
Author(s):
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◽
Norman Gunther
◽
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◽
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◽
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◽
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◽
Semiconductor Devices
◽
Sio2 Thin Film
◽
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◽
Organic Semiconductor Devices
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