A flexible organic memory device with a clearly disclosed resistive switching mechanism

2019 ◽  
Vol 64 ◽  
pp. 209-215 ◽  
Author(s):  
Giulia Casula ◽  
Yan Busby ◽  
Alexis Franquet ◽  
Valentina Spampinato ◽  
Laurent Houssiau ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Organic Memory ◽  
Switching Mechanism ◽  
Organic Memory Device ◽  
Resistive Switching Mechanism

Resistive Switching Mechanism of a Pr0.7Ca0.3MnO3-based Memory Device and Assessment of Its Suitability for Nano-scale Applications

2011 ◽  
Vol 59 (2(1)) ◽  
pp. 497-500 ◽  
Author(s):  
Xinjun Liu ◽  
Insung Kim ◽  
Manzar Siddik ◽  
Sharif Md. Sadaf ◽  
Kuyyadi P. Biju ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Switching Mechanism ◽  
Nano Scale ◽  
Resistive Switching Mechanism

Organic memory device with polyaniline nanoparticles embedded as charging elements

2012 ◽  
Vol 100 (16) ◽  
pp. 163301 ◽  
Author(s):  
Yo-Han Kim ◽  
Minkeun Kim ◽  
Sewook Oh ◽  
Hunsang Jung ◽  
Yejin Kim ◽  
...  
Keyword(s):  
Memory Device ◽  
Organic Memory ◽  
Polyaniline Nanoparticles ◽  
Organic Memory Device

Organic Memory Device with an Organic Memory Layer of Plasma Polymerized Styrene

2018 ◽  
Vol 73 (7) ◽  
pp. 922-927
Author(s):  
Hee-Sung Kim ◽  
Han-Chan Lee ◽  
Boong-Joo Lee ◽  
Paik-Kyun Shin
Keyword(s):  
Memory Device ◽  
Organic Memory ◽  
Organic Memory Device

Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stack

2011 ◽  
Vol 22 (45) ◽  
pp. 455702 ◽  
Author(s):  
Xing Wu ◽  
Kin-Leong Pey ◽  
Nagarajan Raghavan ◽  
Wen-Hu Liu ◽  
Xiang Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Mis Structure ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb2Te3/Ag heterojunctions

2018 ◽  
Vol 20 (27) ◽  
pp. 18200-18206 ◽  
Author(s):  
Xinran Cao ◽  
Caimin Meng ◽  
Jing Li ◽  
Jun Wang ◽  
Yafei Yuan ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Switching Mechanism ◽  
Multilevel Memory ◽  
Resistive Switching Mechanism

The memristive nature of Ag/Sb2Te3/Ag heterostructural cells was systematically characterized and potentially extended to a novel multilevel memory concept.

scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism
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