Characterization of interfacial barrier charging as a resistive switching mechanism in Ag/Sb2Te3/Ag heterojunctions
2018 ◽
Vol 20
(27)
◽
pp. 18200-18206
◽
Keyword(s):
The memristive nature of Ag/Sb2Te3/Ag heterostructural cells was systematically characterized and potentially extended to a novel multilevel memory concept.
Keyword(s):
Keyword(s):
2019 ◽
Vol 75
(5)
◽
pp. 409-414
◽
Resistive Switching Mechanism in $\hbox{Zn}_{x}\hbox{Cd}_{1 - x}\hbox{S}$ Nonvolatile Memory Devices
2007 ◽
Vol 28
(1)
◽
pp. 14-16
◽
2017 ◽
Vol 46
(6)
◽
pp. 3285-3294
◽