scholarly journals Biomaterial-Induced Stable Resistive Switching Mechanism in TiO2 Thin Films: The Role of Active Interstitial Sites/Ions in Minimum Current Leakage and Superior Bioactivity

ACS Omega ◽  
2020 ◽  
Vol 5 (30) ◽  
pp. 19050-19060
Author(s):  
Misbah Sehar Abbasi ◽  
Muhammad Sultan Irshad ◽  
Naila Arshad ◽  
Iftikhar Ahmed ◽  
Muhammad Idrees ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films ◽  
Current Leakage ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

scholarly journals Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition

2005 ◽  
Vol 98 (3) ◽  
pp. 033715 ◽  
Author(s):  
B. J. Choi ◽  
D. S. Jeong ◽  
S. K. Kim ◽  
C. Rohde ◽  
S. Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
Switching Mechanism ◽  
Layer Deposition ◽  
Resistive Switching Mechanism

Research on resistive switching mechanism of multi-filaments formation/rupture in nickel oxide thin films

2017 ◽  
Vol 201 ◽  
pp. 169-172 ◽  
Author(s):  
Yuxiang Luo ◽  
Sipei Shao ◽  
Huijun Hu ◽  
Jingjing Li ◽  
Jingshi Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Nickel Oxide ◽  
Resistive Switching ◽  
Oxide Thin Films ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism ◽  
Nickel Oxide Thin Films

Effect of Post-annealing Processes on Filamentary-Based Resistive Switching Mechanism of Chromium Oxide Thin Films

2017 ◽  
Vol 46 (6) ◽  
pp. 3285-3294 ◽  
Author(s):  
Ngoc Kim Pham ◽  
Kieu Hanh Thi Ta ◽  
Vinh Cao Tran ◽  
Van Hieu Le ◽  
Bao Thu Le Nguyen ◽  
...  
Keyword(s):  
Thin Films ◽  
Chromium Oxide ◽  
Resistive Switching ◽  
Oxide Thin Films ◽  
Switching Mechanism ◽  
Post Annealing ◽  
Resistive Switching Mechanism

Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

2010 ◽  
Vol 97 (23) ◽  
pp. 232904 ◽  
Author(s):  
Jung Ho Yoon ◽  
Kyung Min Kim ◽  
Min Hwan Lee ◽  
Seong Keun Kim ◽  
Gun Hwan Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Tio2 Thin Films

Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films

2007 ◽  
Vol 90 (24) ◽  
pp. 242906 ◽  
Author(s):  
Kyung Min Kim ◽  
Byung Joon Choi ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Tio2 Thin Films ◽  
Switching Mechanism

The role of the local chemical environment of Ag on the resistive switching mechanism of conductive bridging random access memories

2015 ◽  
Vol 17 (37) ◽  
pp. 23931-23937 ◽  
Author(s):  
E. Souchier ◽  
F. D'Acapito ◽  
P. Noé ◽  
P. Blaise ◽  
M. Bernard ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Local Environment ◽  
Chemical Environment ◽  
Switching Mechanism ◽  
Before And After ◽  
Local Chemical Environment ◽  
Resistive Switching Mechanism

GeSx-based CBRAM devices are studied using synchrotron characterization before and after switching in order to understand the local environment around Ag atoms.

Unravelling Resistive Switching Mechanism in ZnO NW Arrays: The Role of the Polycrystalline Base Layer

2017 ◽  
Vol 122 (1) ◽  
pp. 866-874 ◽  
Author(s):  
Gianluca Milano ◽  
Samuele Porro ◽  
Md Y. Ali ◽  
Katarzyna Bejtka ◽  
Stefano Bianco ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Base Layer ◽  
Switching Mechanism ◽  
Resistive Switching Mechanism

Role of oxygen vacancies on ferromagnetism in Fe-doped TiO2 thin films

2007 ◽  
Vol 102 (7) ◽  
pp. 073905 ◽  
Author(s):  
H. J. Meng ◽  
D. L. Hou ◽  
L. Y. Jia ◽  
X. J. Ye ◽  
H. J. Zhou ◽  
...  
Keyword(s):  
Thin Films ◽  
Oxygen Vacancies ◽  
Tio2 Thin Films ◽  
Doped Tio2

Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

2007 ◽  
Vol 91 (1) ◽  
pp. 012907 ◽  
Author(s):  
Kyung Min Kim ◽  
Byung Joon Choi ◽  
Yong Cheol Shin ◽  
Seol Choi ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Tio2 Thin Films

A flexible organic memory device with a clearly disclosed resistive switching mechanism

2019 ◽  
Vol 64 ◽  
pp. 209-215 ◽  
Author(s):  
Giulia Casula ◽  
Yan Busby ◽  
Alexis Franquet ◽  
Valentina Spampinato ◽  
Laurent Houssiau ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Memory Device ◽  
Organic Memory ◽  
Switching Mechanism ◽  
Organic Memory Device ◽  
Resistive Switching Mechanism
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