Dislocation Associated with SiC Formation on the Seed Surface during Silicon Crystal Growth Process by the Czochralski Method

LYSO:Ce single crystal was widely manufactured by Czochralski method. Considering its high cost and the pollution of the crucible, we tried to prepare the crystal by Verneuil method. Unlike Czochralski method, the Verneuil method need the powders with excellent fluidity and high purity. By comparing the powders annealed at 1100°C,1200°C,1300°C,1400°C and 1500°C, we can obtained the needed powders at 1500°C. We also increased the content of silica to satisfy the volatilization in crystal growth process. The single crystal was prepared by changing the growth parameter. We investigated the phase and the microstructure of the powders and observed the microstucture of the crystal fracture. We discussed the improved method of the process of crystal growth.

Download Full-text

Optimization of the melt/crystal interface shape and oxygen concentration during the Czochralski silicon crystal growth process using an artificial neural network and a genetic algorithm

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2020.125828 ◽

2020 ◽

Vol 548 ◽

pp. 125828

Author(s):

Xiaofang Qi ◽

Wencheng Ma ◽

Yifan Dang ◽

Wenjia Su ◽

Lijun Liu

Keyword(s):

Neural Network ◽

Genetic Algorithm ◽

Artificial Neural Network ◽

Crystal Growth ◽

Growth Process ◽

Silicon Crystal ◽

Interface Shape ◽

Czochralski Silicon ◽

Crystal Growth Process ◽

Crystal Interface

Download Full-text

Hydrodynamical aspects of the floating zone silicon crystal growth process

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2013.12.066 ◽

2014 ◽

Vol 401 ◽

pp. 120-123 ◽

Cited By ~ 7

Author(s):

Kirils Surovovs ◽

Andris Muiznieks ◽

Andrejs Sabanskis ◽

Janis Virbulis

Keyword(s):

Crystal Growth ◽

Growth Process ◽

Silicon Crystal ◽

Floating Zone ◽

Crystal Growth Process

Download Full-text

Thermal Analysis for Designing the Hot-Zone of a Silicon Czochralski Crystal Furnace

Volume 7: Fluids and Heat Transfer, Parts A, B, C, and D ◽

10.1115/imece2012-87078 ◽

2012 ◽

Author(s):

Jun Liu

Keyword(s):

Thermal Analysis ◽

Crystal Growth ◽

Power Consumption ◽

Growth Process ◽

Silicon Crystal ◽

Analysis Model ◽

Crystal Growth Process ◽

Hot Zone

The present work is aimed at developing an axial symmetric thermal analysis model for designing the hot-zone of a silicon crystal growth furnace. An analysis model is developed which can be used to predict the approximate pulling rate and power consumption during silicon crystal growth process when utilizing the Czochralski (CZ) method. In addition, the effectiveness of this analysis model is experimentally confirmed.

Download Full-text

Numerical Simulation of the Effect of Heater Position on the Oxygen Concentration in the CZ Silicon Crystal Growth Process

International Journal of Photoenergy ◽

10.1155/2012/395235 ◽

2012 ◽

Vol 2012 ◽

pp. 1-6 ◽

Cited By ~ 7

Author(s):

Ying-Yang Teng ◽

Jyh-Chen Chen ◽

Chung-Wei Lu ◽

Cheng-Chuan Huang ◽

Wan-Ting Wun ◽

...

Keyword(s):

Crystal Growth ◽

Oxygen Concentration ◽

Concentration Distribution ◽

Growth Process ◽

Silicon Crystal ◽

Crucible Wall ◽

Crystal Growth Process ◽

Silicon Melt ◽

Average Oxygen Concentration ◽

Crystal Interface

We perform numerical simulations to analyze the effect of the position of the heater on the thermal and flow fields and the oxygen concentration distribution during the industrial Cz silicon crystal growth process. The amount of oxygen released from the silica crucible to the silicon melt during the growth process can be lowered by adjusting the heater position to decrease the temperature on the crucible wall. During growth of the crystal body, there is a significant decrease in the gradient of the oxygen concentration along the melt-crystal interface due to the stronger Taylor-Proudman vortex, which is generated by the crucible and crystal rotation. There is a significant reduction in the average oxygen concentration at the melt-crystal interface for longer crystal lengths because of the lower wall temperature, smaller contact surface between the crucible wall and the melt and the stronger Taylor-Proudman vortex.

Download Full-text