scholarly journals Properties of High-Frequency Sub-Wavelength Ripples on Stainless Steel 304L under Ultra Short Pulse Laser Irradiation

2011 ◽  
Vol 12 ◽  
pp. 99-104 ◽  
Author(s):  
V.S. Mitko ◽  
G.R.B.E. Römer ◽  
A.J. Huis in ‘t Veld ◽  
J.Z.P. Skolski ◽  
J.V. Obona ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Laser Irradiation ◽  
Pulse Laser ◽  
High Frequency ◽  
Short Pulse ◽  
Pulse Laser Irradiation ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser ◽  
Sub Wavelength

Femtosecond Ti: Sa ultra short-pulse laser irradiation effects on the properties and morphology of the zirconia surface after ageing

2020 ◽  
Author(s):  
Vanessa Harumi Kiyan ◽  
Flávia Pires Rodrigues ◽  
Ricardo Elgul Samad ◽  
Denise Maria Zezell ◽  
Marco Antonio Bottino ◽  
...  
Keyword(s):  
Laser Irradiation ◽  
Pulse Laser ◽  
Short Pulse ◽  
Irradiation Effects ◽  
Pulse Laser Irradiation ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Nano-Surface Modification of Silicon with Ultra-Short Pulse Laser Process

2011 ◽  
Vol 470 ◽  
pp. 117-122
Author(s):  
Yuichi Setsuhara ◽  
Masaki Hashida
Keyword(s):  
Surface Modification ◽  
Pulse Laser ◽  
Room Temperature ◽  
Short Pulse ◽  
Adiabatic Process ◽  
Pulse Laser Irradiation ◽  
Laser Process ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

An ultra-short pulse laser process is presented that is based on a photon-induced phonon excitation process for low-temperature nano-surface modification of silicon. The present methodology is based on the concept that the energy required for re-crystallization and activation of the implanted dopants is supplied to the dopant layer via a nonequilibrium adiabatic process induced by ultra-short pulse laser irradiation at room temperature. An ultra-short pulse laser beam with a pulse duration of ~ 100 femtoseconds has been used in the present work for the investigation of surface excitation features via pump-probe reflectivity measurements and for demonstrations of room-temperature re-crystallization and activation of ion-implanted silicon substrates.

Silicon Thinning using Ultra-Short Pulse Laser Ablation

2004 ◽  
Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Sample Preparation ◽  
Pulse Laser ◽  
Pulse Laser Ablation ◽  
Short Pulse ◽  
Special Care ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.

The study of time dependent, broadband X-ray emission from ultra-short pulse laser produced plasmas

1994 ◽  
Author(s):  
Ronnie Shepherd ◽  
Rex Booth ◽  
Dwight Price ◽  
Rosemary Walling ◽  
Richard More ◽  
...  
Keyword(s):  
Pulse Laser ◽  
Short Pulse ◽  
Time Dependent ◽  
X Ray ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser

Ultra-short pulse laser safety - a challenge to materials science

2005 ◽  
Author(s):  
Andreas Hertwig ◽  
Sven Martin ◽  
Wolfgang Kautek ◽  
Jörg Krüger
Keyword(s):  
Pulse Laser ◽  
Materials Science ◽  
Short Pulse ◽  
Laser Safety ◽  
Short Pulse Laser ◽  
Ultra Short Pulse ◽  
Ultra Short Pulse Laser
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