Modelisation of boron diffusion from ultra-low-energy implantation in crystalline silicon

2003 ◽  
Vol 340-342 ◽  
pp. 777-779
Author(s):  
L. Ihaddadene-Le Coq ◽  
J. Marcon ◽  
A. Dush-Nicolini ◽  
K. Masmoudi ◽  
K. Ketata
Keyword(s):  
Crystalline Silicon ◽  
Low Energy ◽  
Boron Diffusion

A Comparison of Low Energy BF2 Implantation in Si and Ge Preamorphized Silicon

1988 ◽  
Vol 128 ◽  
Author(s):  
Gary A. Ruggles ◽  
Shin-Nam Hong ◽  
Jimmie J. Wortman ◽  
Mehmet Ozturk ◽  
Edward R. Myers ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Crystalline Silicon ◽  
Amorphous Layer ◽  
Low Energy ◽  
Electrical Activation ◽  
Silicon Substrates ◽  
Boron Diffusion ◽  
Junction Depth ◽  
Rapid Thermal Anneal ◽  
Boron Segregation

ABSTRACTLow energy (6 keV) BF2 implantation was carried out using single crystal, Ge-preamorphized, and Si-preamorphized silicon substrates. Implanted substrates were rapid thermal annealed at temperatures from 600°C to 1050'C and boron channeling, diffusion, and activation were studied. Ge and Si preamorphization energies were chosen to produce nearly identical amorphous layer depths as determined by TEM micrographs (approximately 40 nm in both cases). Boron segregation to the end-of-range damage region was observed for 6 keV BF2 implantation into crystalline silicon, although none was detected in preamorphized substrates. Junction depths as shallow as 50 nm were obtained. In this ultra-low energy regime for ion implantation, boron diffusion was found to be as important as boron channeling in determining the junction depth, and thus, preamorphization does not result in a significant reduction in junction depth. However, the formation of junctions shallower than 100 rmu appears to require RTA temperatures below 1000°C which can lead to incomplete activation unless the substrate has been preamorphized. In the case of preamorphized samples, Hall measurements revealed that nearly complete electrical activation can be obtained for preamorphized samples after a 10 second rapid thermal anneal at temperatures as low as 600°C.

Study of BF2 ion implantation into crystalline silicon : Influence of fluorine on boron diffusion

2004 ◽  
Vol 810 ◽  
Author(s):  
Lilya Ihaddadene-Lecoq ◽  
Jerome Marcon ◽  
Kaouther Ketata
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Concentration Profiles ◽  
Boron Diffusion ◽  
Boron Difluoride ◽  
Secondary Ion ◽  
Trap Interstitial

ABSTRACTWe have investigated and modeled the diffusion of boron implanted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1×1015 cm−2 implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950°C, 1000°C, 1050°C and 1100°C during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.

Low Energy Implantation and Transient Enhanced Diffusion: Physical Mechanisms and Technology Implications

1997 ◽  
Vol 469 ◽  
Author(s):  
N. E. B. Cowern ◽  
E. J. H. Collart ◽  
J. Politiek ◽  
P. H. L. Bancken ◽  
J. G. M. Van Berkum ◽  
...  
Keyword(s):  
Thermal Activation ◽  
Crystalline Silicon ◽  
Cmos Technology ◽  
Low Energy ◽  
Defect Engineering ◽  
Enhanced Diffusion ◽  
Physical Mechanisms ◽  
Transient Enhanced Diffusion ◽  
Junction Formation ◽  
Silicon Cmos

ABSTRACTLow energy implantation is currently the most promising option for shallow junction formation in the next generations of silicon CMOS technology. Of the dopants that have to be implanted, boron is the most problematic because of its low stopping power (large penetration depth) and its tendency to undergo transient enhanced diffusion and clustering during thermal activation. This paper reports recent advances in our understanding of low energy B implants in crystalline silicon. In general, satisfactory source-drain junction depths and sheet resistances are achievable down to 0.18 micron CMOS technology without the need for implantation of molecular species such as BF2. With the help of defect engineering it may be possible to reach smaller device dimensions. However, there are some major surprises in the physical mechanisms involved in implant profile formation, transient enhanced diffusion and electrical activation of these implants, which may influence further progress with this technology. Some initial attempts to understand and model these effects will be described.

Process-Induced Diffusion Phenomena in Advanced CMOS Technologies

2006 ◽  
Vol 258-260 ◽  
pp. 510-521 ◽  
Author(s):  
Peter Pichler ◽  
Alexander Burenkov ◽  
Wilfried Lerch ◽  
Jürgen Lorenz ◽  
Silke Paul ◽  
...  
Keyword(s):  
Process Simulation ◽  
Thermal Processing ◽  
Crystalline Silicon ◽  
Rapid Thermal Processing ◽  
Correct Prediction ◽  
Boron Diffusion ◽  
Dopant Distribution ◽  
Device Design ◽  
Tight Control ◽  
Diffusion Phenomena

The continuous scaling of electron devices places strong demands on device design and simulation. The currently prevailing bulk transistors as well as future designs based on thin silicon layers all require a tight control of the dopant distribution. For process simulation, especially the correct prediction of boron diffusion and activation was always a problem. The paper describes the model developed for boron implanted into crystalline silicon and shows applications to hot-shield annealing and flash-assisted rapid thermal processing.

Application of molecular dynamics for low-energy ion implantation in crystalline silicon

2006 ◽  
Vol 24 (1) ◽  
pp. 462 ◽  
Author(s):  
H. Y. Chan ◽  
M. P. Srinivasan ◽  
N. J. Montgomery ◽  
C. P. A. Mulcahy ◽  
S. Biswas ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Ion Implantation ◽  
Crystalline Silicon ◽  
Low Energy

scholarly journals Molecular Dynamics Simulations of Nanoparticle-Surface Collisions in Crystalline Silicon

2008 ◽  
Vol 1 ◽  
pp. 31-39 ◽  
Author(s):  
Paolo Valentini ◽  
Traian Dumitrica
Keyword(s):  
Molecular Dynamics ◽  
Phase Transformation ◽  
Crystalline Silicon ◽  
Low Energy ◽  
Coherent Phonon ◽  
Soft Landing ◽  
Microscopic Description ◽  
Nanoparticle Surface ◽  
Deformation Regime ◽  
Dynamics Simulations

We present a microscopic description for the impacting process of silicon nanospheres onto a silicon substrate. In spite of the relatively low energy regime considered (up to 1 eV/atom), the impacting process exhibits a rich behavior: A rigid Hertzian model is valid for speeds below 500 m/s, while a quasi-ellipsoidal deformation regime emerges at larger speeds. Furthermore, for speeds up to 1000 m/s the particle undergoes a soft landing and creates a long-lived coherent surface phonon. Higher speeds lead to a rapid attenuation of the coherent phonon due to a partial diamond cubic to-tin phase transformation occurring in the particle.

Boron diffusion in extrinsically doped crystalline silicon

2010 ◽  
Vol 81 (4) ◽  
Author(s):  
D. De Salvador ◽  
E. Napolitani ◽  
G. Bisognin ◽  
M. Pesce ◽  
A. Carnera ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Boron Diffusion

Monte Carlo simulation of Boron diffusion during low energy implantation and high temperature annealing

1997 ◽  
Vol 469 ◽  
Author(s):  
M.-J. Caturla ◽  
T. Diaz de la Rubia ◽  
J. Zhu ◽  
M. Johnson
Keyword(s):  
Monte Carlo ◽  
High Temperature ◽  
Kinetic Monte Carlo ◽  
Monte Carlo Model ◽  
Low Energy ◽  
High Temperature Annealing ◽  
Boron Diffusion ◽  
Enhanced Diffusion ◽  
Diffusion Enhancement ◽  
High Doses

ABSTRACTWe use a kinetic Monte Carlo model to simulate the implantation of low energy Boron in Silicon, from 0.5 to 1 keV, at high doses, 1015 ions/cm2. The damage produced by each ion is calculated using UT-Marlowe, based on a binary collision approximation. During implantation at room temperature,, silicon self-interstitials, vacancies and boron interstitials are allowed to migrate and interact. The diffusion kinetics of these defects and dopants has been obtained by ab initio calculations as well as Stillinger Weber molecular dynamics. Clustering of both self-interstitials, vacancies and boron atoms is included. We also model the diffusion of the implanted dopants after a high temperature annealing in order to understand the transient enhanced diffusion (TED) phenomenon. We observe two different stages of TED During the first stage vacancies are present in the lattice together with interstitials and the diffusion enhancement is small. The second stage starts after all the vacancies disappear and gives rise to most of the final TED.

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