Fabrication of low-resistive p-type Al–N co-doped zinc oxide thin films by RF reactive magnetron sputtering

2009 ◽  
Vol 404 (23-24) ◽  
pp. 4846-4849 ◽  
Author(s):  
Hsin-Chun Lu ◽  
Jo-Ling Lu ◽  
Chi-You Lai ◽  
Gwo-Mei Wu
2004 ◽  
Vol 109 (1-3) ◽  
pp. 241-244 ◽  
Author(s):  
Kh.A. Abdullin ◽  
A.B. Aimagambetov ◽  
N.B. Beisenkhanov ◽  
A.T. Issova ◽  
B.N. Mukashev ◽  
...  

2007 ◽  
Vol 124-126 ◽  
pp. 999-1002 ◽  
Author(s):  
Han Na Cho ◽  
Jang Woo Lee ◽  
Su Ryun Min ◽  
Chee Won Chung

Indium zinc oxide (IZO) thin films were deposited on a glass substrate by radio frequency (rf) reactive magnetron sputtering method. As the rf power increased, the deposition rate and resistivity increased while the optical transmittance decreased owing to the increase of grain size. With increasing gas pressure, the resistivity increased and the transmittance decreased. Atomic force microscopy and scanning electron microscopy were employed to observe the film surface. The IZO films displayed a resistivity of 3.8 × 10-4 Ω cm and a transmittance of about 90% in visible region.


2019 ◽  
Vol 691 ◽  
pp. 137592 ◽  
Author(s):  
Marcin Łapiński ◽  
Michalina Walas ◽  
Anna Gapska ◽  
Dorota Kulik ◽  
Aneta Szmytke ◽  
...  

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