Effects of lanthanum doping on the microstructure and electrical properties of sol–gel derived Pb1-3x/2Lax(Zr0.5Ti0.5)O3 thin films

2010 ◽  
Vol 405 (11) ◽  
pp. 2585-2588 ◽  
Author(s):  
S.Q Zhang ◽  
W.L. Li ◽  
N. Li ◽  
W.D. Fei
2015 ◽  
Vol 76 (1) ◽  
pp. 220-226 ◽  
Author(s):  
Dongfang Chen ◽  
Shengli Huang ◽  
Jianguo Chen ◽  
Jinrong Cheng

2010 ◽  
Vol 22 (6) ◽  
pp. 666-671 ◽  
Author(s):  
Si-Jia Liu ◽  
Hua Wang ◽  
Ji-Wen Xu ◽  
Ming-Fang Ren ◽  
Ling Yang ◽  
...  

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.


Author(s):  
Anusuya Sahoo ◽  
A R Jayakrishnan ◽  
K Kamakshi ◽  
J P B Silva ◽  
K C Sekhar ◽  
...  

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