Effects of lanthanum doping on the preferred orientation, phase structure and electrical properties of sol–gel derived Pb1–3x/2Lax (Zr0.6Ti0.4)O3 thin films

2011 ◽  
Vol 509 (6) ◽  
pp. 2976-2980 ◽  
Author(s):  
S.Q. Zhang ◽  
L.D. Wang ◽  
W.L. Li ◽  
N. Li ◽  
W.D. Fei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Phase Structure ◽  
Sol Gel ◽  
Preferred Orientation ◽  
Lanthanum Doping

Composition dependence of phase structure and electrical properties of BiMnO3-modified Bi0.5(Na0.8K0.2)0.5TiO3 thin films

RSC Advances ◽  
2015 ◽  
Vol 5 (77) ◽  
pp. 62713-62718 ◽  
Author(s):  
Peng Li ◽  
Wei Li ◽  
Jiwei Zhai ◽  
Bo Shen ◽  
Huarong Zeng ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Phase Structure ◽  
Composition Dependence ◽  
Sol Gel ◽  
Lead Free ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates

Lead-free (1 − x)Bi0.5(Na0.8K0.2)0.5TiO3-xBiMnO3 (BNKT-xBMO, 0 < x < 0.025) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol–gel method, and the effects of BiMnO3 addition on the crystal structure and electrical properties were systematically investigated.

Effect of Microstructure on the Electrical Characteristics of Sol-Gel Derived PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Jiyoung Kim ◽  
Rajesh Khamankar ◽  
Bo Jiang ◽  
Papu Mamar ◽  
Reza Moazzami ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Material Properties ◽  
Sol Gel ◽  
Preferred Orientation ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Sem Micrographs ◽  
Different Grain Size

ABSTRACTThe effects of the microstructure of PZT sol-gel thin films, processed using different solutions, on their material and electrical properties have been studied. The films have different degrees of preferred orientation of the perovskite crystals as well as different grain size. The material characteristics are evaluated using SEM micrographs and XRD. Correlation of these material properties with the electrical properties for both NVRAM and DRAM applications is made.

Investigation of electrical properties in La-doped BiFeO3–PbTiO3 thin films prepared by sol–gel method

2015 ◽  
Vol 76 (1) ◽  
pp. 220-226 ◽  
Author(s):  
Dongfang Chen ◽  
Shengli Huang ◽  
Jianguo Chen ◽  
Jinrong Cheng
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
La Doped

Structure and electrical properties of CuAlO2 thin films derived by sol–gel processing

2010 ◽  
Vol 22 (6) ◽  
pp. 666-671 ◽  
Author(s):  
Si-Jia Liu ◽  
Hua Wang ◽  
Ji-Wen Xu ◽  
Ming-Fang Ren ◽  
Ling Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Gel Processing

Microstructural, Optical and Electrical Properties of ZnO:Sn Thin Films Deposited by Sol-Gel Method

2013 ◽  
Vol 652-654 ◽  
pp. 519-522
Author(s):  
Jun Chen ◽  
Yue Hui Hu ◽  
Hong Hao Hu ◽  
Yi Chuan Chen
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Sol Gel ◽  
Hexagonal Structure ◽  
Optical And Electrical Properties ◽  
Axis Orientation ◽  
Gel Method ◽  
Sol Gel Method ◽  
Sn Doping ◽  
Glass Substrates

Transparent thin films of Sn-doped ZnO (ZnO:Sn) were deposited onto silica glass substrates by the sol–gel method. The effect of different Sn doping on the crystallinity, structural, optical and electrical properties of ZnO:Sn thin films were investigated by XRD, SEM, UV-VIS spectrophotometer and four-point probe method respectively. Among all of ZnO:Sn thin films in this paper, Sn-doped with 2 at.% exhibited the best properties, the surface demonstrate an accumulative crystallization and hexagonal structure, with a high-preferential c-axis orientation, namely an average transmittance of 90% and the resistivity of 19.6 Ω·cm.

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