Magnetic field effect on the ground-state binding energy in InGaN/GaN parabolic QWW

2013 ◽  
Vol 421 ◽  
pp. 73-76 ◽  
Author(s):  
Haddou El Ghazi ◽  
Anouar Jorio ◽  
Izeddine Zorkani
2008 ◽  
Vol 22 (12) ◽  
pp. 1923-1932
Author(s):  
JIA LIU ◽  
ZI-YU CHEN

The influence of a perpendicular magnetic field on a bound polaron near the interface of a polar–polar semiconductor with Rashba effect has been investigated. The material is based on a GaAs / Al x Ga 1-x As heterojunction and the Al concentration varying from 0.2 ≤ x ≤ 0.4 is the critical value below which the Al x Ga 1-x As is a direct band gap semiconductor.The external magnetic field strongly altered the ground state binding energy of the polaron and the Rashba spin–orbit (SO) interaction originating from the inversion asymmetry in the heterostructure splitting of the ground state binding energy of the bound polaron. How the ground state binding energy will be with the change of the external magnetic field, the location of a single impurity and the electron area density have been shown in this paper, taking into account the SO coupling. The contribution of the phonons are also considered. It is found that the spin-splitting states of the bound polaron are more stable, and, in the condition of weak magnetic field, the Zeeman effect can be neglected.


2019 ◽  
Vol 33 (21) ◽  
pp. 1950239 ◽  
Author(s):  
Xiu-Qing Wang ◽  
Ying-Jie Chen ◽  
Jing-Lin Xiao

The ground state binding energy (E[Formula: see text]) and the mean number of LO phonons (N) of the strong-coupling magneto-polaron (SCMP) in an asymmetrical semi-exponential quantum well (ASEQW) are studied theoretically. Temperature (T) effects on E[Formula: see text] and N are acquired with the quantum statistics theory (QST). By using the Lee-Low-Pines unitary transformation (LLPUT) and linear combination operation method (LCOM), the variations of E[Formula: see text] and N with T and [Formula: see text] of magnetic field are discussed. The investigated results indicate that both T and [Formula: see text] have great influence on E[Formula: see text] and N of LO phonons.


2000 ◽  
Vol 293 (1-2) ◽  
pp. 137-143 ◽  
Author(s):  
R. Charrour ◽  
M. Bouhassoune ◽  
M. Fliyou ◽  
A. Nougaoui

2021 ◽  
Author(s):  
Shun Kimura ◽  
Shojiro Kimura ◽  
Ken Kato ◽  
Yoshio Teki ◽  
Hiroshi Nishihara ◽  
...  

We investigated the mechanism of the magnetic field effect (MFE) on the emission of a luminescent radical doped into host crystals. It was revealed that the spin sublevel population of radical dimers in the ground states is the key that governs the MFE.


2001 ◽  
Vol 120 (1-3) ◽  
pp. 1027-1028
Author(s):  
V. Laukhin ◽  
A. Perez-Benitez ◽  
C. Rovira ◽  
J. Veciana ◽  
E. Canadell ◽  
...  

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