Thickness effect on structure and properties of ZAO thin films by RF magnetron sputtering at different substrate temperatures

AbstractSuperconducting Bi system thin films have been formed on MgO(100) substrates by RF magnetron sputtering from three Pb‐doped targets: Bi2.4 Pb0.6 Sr2 Ca2 CU3 O x ,Bi 1.6 Pb0.4 Sr3 Ca3 CU3 O x and Bi 1.6 Pb 0.4 Sr2 Ca2 CU4.5 O x. The as‐grown films formed at substrate temperatures above 600 °C showed superconductivity, though, they did not contain Pb. The film, formed at 660°C and kept at the same substrate temperature and gas pressure as the sputtering conditions for 5 h after deposition, showed a resistivity drop at 115 K and zero resistivity at 83 K. The Jc value of the film was 4x105 A/cm2 at 77 K and 3x107 A/cm 2 at 20 K.

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Formation of NiZn ferrite nano-crystalline thin films by rf magnetron sputtering with changing substrate temperatures

Thermochimica Acta ◽

10.1016/j.tca.2010.11.030 ◽

2012 ◽

Vol 532 ◽

pp. 145-147 ◽

Cited By ~ 5

Author(s):

M. Yanagihara ◽

K. Kawano ◽

T. Honda ◽

T. Kyomen ◽

M. Hanaya

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Nano Crystalline ◽

Substrate Temperatures

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Characterization of Al Doped ZnO Thin Films Prepared by RF Magnetron Sputtering Under Various Substrate Temperatures

Applied Science and Convergence Technology ◽

10.5757/asct.2014.23.5.260 ◽

2014 ◽

Vol 23 (5) ◽

pp. 279-283 ◽

Cited By ~ 3

Author(s):

Deok Kyu Kim ◽

Hong Bae Kim

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Doped Zno ◽

Substrate Temperatures

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Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

Journal of Nanomaterials ◽

10.1155/2015/936482 ◽

2015 ◽

Vol 2015 ◽

pp. 1-11 ◽

Cited By ~ 3

Author(s):

Fang-Hsing Wang ◽

Jen-Chi Chao ◽

Han-Wen Liu ◽

Tsung-Kuei Kang

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Film Surface ◽

Hexagonal Wurtzite Structure ◽

Rf Magnetron Sputtering ◽

Force Microscopy ◽

Glass Substrates ◽

Transparent Conducting ◽

Diffraction Patterns ◽

Substrate Temperatures

Transparent conducting titanium-doped zinc oxide (TZO) thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2) flow ratios (RH) and substrate temperatures (TS). The optimalRHvalue for achieving high conducting TZO:H thin film decreased from 10% to 1% whenTSincreased from RT to 300°C. The lowest resistivity of9.2×10-4 Ω-cm was obtained asTS=100°C andRH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002) direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasingRH. The average visible transmittance decreased with increasingRHfor the RT-deposited film, while it had not considerably changed with differentRHfor the 300°C-deposited films. The optical bandgap increased asRHincreased, which is consistent with the Burstein-Moss effect. The figure of merits indicated thatTS=100°C andRH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

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