Characteristics of SrTiO 3 thin films deposited on Si by rf magnetron sputtering at various substrate temperatures

2002 ◽  
Vol 82 (8) ◽  
pp. 891-903 ◽  
Author(s):  
Zhongchun Wang ◽  
Veronika Kugler ◽  
Ulf Helmersson ◽  
E. K. Evangelou ◽  
N. Konofaos ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Substrate Temperatures

Thickness effect on structure and properties of ZAO thin films by RF magnetron sputtering at different substrate temperatures

2011 ◽  
Vol 43 (9) ◽  
pp. 1738-1745 ◽  
Author(s):  
B.L. Zhu ◽  
S.J. Zhu ◽  
J. Wang ◽  
J. Wu ◽  
D.W. Zeng ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Thickness Effect ◽  
Structure And Properties ◽  
Substrate Temperatures

The effects of substrate temperatures on the electrical properties of CaZrO3 thin films prepared by RF magnetron sputtering

2020 ◽  
Vol 20 (4) ◽  
pp. 557-561 ◽  
Author(s):  
Qiao He ◽  
Yi Zhang ◽  
Xiaoyang Chen ◽  
Zhi Wang ◽  
Hang Ji ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Substrate Temperatures

As‐Grown Superconductivity of Bi‐System Thin Films Prepared by Magnetron Sputtering with Three Pb Doped Targets: (Bi 1.6 Pb0.4) 1 + a (SrCa)2 Cu3 O x, (Bi 1.6 Pb0.4) 1 (SrCa)2+c Cu3 Ox and (Bi 1.6 Pb0.4) 1 (SrCa)2Cu3+cOx (a = 0.5, b= 1,c= 1.5)

1989 ◽  
Vol 169 ◽  
Author(s):  
Ken'ichi Kuroda ◽  
Masami Tanioku ◽  
Kazuyoshi Kojima ◽  
Koichi Hamanaka
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Gas Pressure ◽  
Substrate Temperatures

AbstractSuperconducting Bi system thin films have been formed on MgO(100) substrates by RF magnetron sputtering from three Pb‐doped targets: Bi2.4 Pb0.6 Sr2 Ca2 CU3 O x ,Bi 1.6 Pb0.4 Sr3 Ca3 CU3 O x and Bi 1.6 Pb 0.4 Sr2 Ca2 CU4.5 O x. The as‐grown films formed at substrate temperatures above 600 °C showed superconductivity, though, they did not contain Pb. The film, formed at 660°C and kept at the same substrate temperature and gas pressure as the sputtering conditions for 5 h after deposition, showed a resistivity drop at 115 K and zero resistivity at 83 K. The Jc value of the film was 4x105 A/cm2 at 77 K and 3x107 A/cm 2 at 20 K.

Formation of NiZn ferrite nano-crystalline thin films by rf magnetron sputtering with changing substrate temperatures

2012 ◽  
Vol 532 ◽  
pp. 145-147 ◽  
Author(s):  
M. Yanagihara ◽  
K. Kawano ◽  
T. Honda ◽  
T. Kyomen ◽  
M. Hanaya
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Nano Crystalline ◽  
Substrate Temperatures

scholarly journals Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

2015 ◽  
Vol 2015 ◽  
pp. 1-11 ◽  
Author(s):  
Fang-Hsing Wang ◽  
Jen-Chi Chao ◽  
Han-Wen Liu ◽  
Tsung-Kuei Kang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Surface ◽  
Hexagonal Wurtzite Structure ◽  
Rf Magnetron Sputtering ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Transparent Conducting ◽  
Diffraction Patterns ◽  
Substrate Temperatures

Transparent conducting titanium-doped zinc oxide (TZO) thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2) flow ratios (RH) and substrate temperatures (TS). The optimalRHvalue for achieving high conducting TZO:H thin film decreased from 10% to 1% whenTSincreased from RT to 300°C. The lowest resistivity of9.2×10-4 Ω-cm was obtained asTS=100°C andRH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002) direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasingRH. The average visible transmittance decreased with increasingRHfor the RT-deposited film, while it had not considerably changed with differentRHfor the 300°C-deposited films. The optical bandgap increased asRHincreased, which is consistent with the Burstein-Moss effect. The figure of merits indicated thatTS=100°C andRH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

Composition, Structure and Electrical Resistivity of TiOx Thin Films Deposited by RF Magnetron Sputtering at Varied Substrate Temperatures

2014 ◽  
Vol 602-603 ◽  
pp. 1039-1042 ◽  
Author(s):  
Hai Xia Su ◽  
Zhi Jian Peng ◽  
Xiu Li Fu
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Magnetron Sputtering ◽  
Anatase Phase ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Composition Structure ◽  
Substrate Temperatures ◽  
Deposited Films

TiOx thin films were deposited by RF magnetron sputtering with TiOx (x<2) target at varied substrate temperatures. The composition and microstructure of the films was characterized by grazing incidence X-ray diffraction, scanning electron microscopy and Raman spectroscopy, which revealed that the films deposited at low temperatures were amorphous, and as the temperature increased up to 600 °C, the prepared films became crystalline and a TiO2 anatase phase was identified. Also the electrical resistivity of the as-prepared TiOx films was investigated as a function of the deposition temperature. The result indicates that with the raise of substrate temperature, the electrical resistivity of the deposited films decreased sharply.

The effect of substrate temperatures of the (Na,K)NbO3 ferroelectric thin films fabricated by RF magnetron sputtering

2010 ◽  
Vol 56 (1(2)) ◽  
pp. 417-420 ◽  
Author(s):  
Hai Joon Lee ◽  
Ill Won Kim ◽  
Byung Moon Jin
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ferroelectric Thin Films ◽  
Substrate Temperatures

Structural Properties of SrTiO3 Transparent Thin Films Formed by RF Magnetron Sputtering with Changing Substrate Temperatures

2013 ◽  
Vol 534 ◽  
pp. 40-45
Author(s):  
Kenji Kakiage ◽  
Shiho Ishiuchi ◽  
Toru Kyomen ◽  
Minoru Hanaya
Keyword(s):  
Thin Films ◽  
Particle Size ◽  
Magnetron Sputtering ◽  
Structural Properties ◽  
Lattice Constant ◽  
Strontium Titanate ◽  
Glass Plate ◽  
Rf Magnetron Sputtering ◽  
Transparent Film ◽  
Substrate Temperatures

Transparent thin films of strontium titanate (SrTiO3) were formed on the substrate of quartz glass plate by RF magnetron sputtering with changing the substrate temperatures during the sputtering from 100 to 700 °C. The particle size and the lattice constant of the cubic-SrTiO3 crystallites composing the film were exhibited to be changed from 13 to 48 nm and from 4.02 to 3.96 Å, respectively, by the change of the substrate temperatures from 400 to 700 °C. The UV absorption edges of the transparent film samples shifted to longer wavelength with the increase of the particle size and the decrease of the lattice constant of the nanocrystalline SrTiO3.

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