Stacking and electric field effects on the band alignment and electronic properties of the GeC/GaSe heterostructure

2020 ◽  
Vol 120 ◽  
pp. 114050
Author(s):  
Dat D. Vo ◽  
Vo T.T. Vi ◽  
Tan Phat Dao ◽  
Tuan V. Vu ◽  
Huynh V. Phuc ◽  
...  
2017 ◽  
Vol 5 (47) ◽  
pp. 12629-12634 ◽  
Author(s):  
Qiang Gao ◽  
Congxin Xia ◽  
Wenqi Xiong ◽  
Juan Du ◽  
Tianxing Wang ◽  
...  

The Ca(OH)2/α-MoTe2 vdW heterostructure exhibits the characteristics of electric field-tunable band alignment, outstanding absorption strength (∼105 cm−1) and broad spectrum absorption.


2019 ◽  
Vol 21 (10) ◽  
pp. 5627-5633 ◽  
Author(s):  
Zhihui Zhang ◽  
Yan Zhang ◽  
Zifeng Xie ◽  
Xing Wei ◽  
Tingting Guo ◽  
...  

An Sb/InSe heterostructure manifests a varied direct bandgap under an electric field which is more favorable to FETs and MEMS devices.


2020 ◽  
Vol 8 (1) ◽  
pp. 89-97 ◽  
Author(s):  
Bin Zhou ◽  
Shi-Jing Gong ◽  
Kai Jiang ◽  
Liping Xu ◽  
Liyan Shang ◽  
...  

A GaSe/GeS heterobilayer with a type-II band alignment and electric field modulated data storage.


2016 ◽  
Vol 18 (23) ◽  
pp. 15639-15644 ◽  
Author(s):  
Kenji Iida ◽  
Katsuyuki Nobusada

The mechanism of band gap variation in silicene–amine hetero-interface systems with an applied electric field is revealed by carrying out first-principles calculations.


2021 ◽  
Vol 103 (14) ◽  
Author(s):  
Lina Chen ◽  
Yaoyu Gu ◽  
Kaiyuan Zhou ◽  
Zishuang Li ◽  
Liyuan Li ◽  
...  

2018 ◽  
Vol 58 (6-8) ◽  
pp. 465-470
Author(s):  
L. Valade ◽  
A. Ekedahl ◽  
P. Ghendrih ◽  
Y. Sarazin ◽  
Y. Asahi ◽  
...  

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