Tunable electronic properties of an Sb/InSe van der Waals heterostructure by electric field effects

2019 ◽  
Vol 21 (10) ◽  
pp. 5627-5633 ◽  
Author(s):  
Zhihui Zhang ◽  
Yan Zhang ◽  
Zifeng Xie ◽  
Xing Wei ◽  
Tingting Guo ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Mems Devices ◽  
Electric Field Effects ◽  
Direct Bandgap ◽  
Field Effects ◽  
Van Der Waals Heterostructure

An Sb/InSe heterostructure manifests a varied direct bandgap under an electric field which is more favorable to FETs and MEMS devices.

Electric field effects on the electronic and optical properties in C2N/Sb van der Waals heterostructure

Carbon ◽  
2018 ◽  
Vol 129 ◽  
pp. 738-744 ◽  
Author(s):  
Xiaolong Wang ◽  
Ruge Quhe ◽  
Wei Cui ◽  
Yusong Zhi ◽  
Yuanqi Huang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electric Field ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Electronic And Optical Properties ◽  
Field Effects ◽  
Van Der Waals Heterostructure

Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure

2020 ◽  
Vol 8 (32) ◽  
pp. 11160-11167 ◽  
Author(s):  
Bin Zhou ◽  
Kai Jiang ◽  
Liyan Shang ◽  
Jinzhong Zhang ◽  
Yawei Li ◽  
...  
Keyword(s):  
Electric Field ◽  
External Electric Field ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Field Effects ◽  
Van Der Waals Heterostructure ◽  
Carrier Separation

Enhanced carrier separation in ferroelectric In2Se3/MoS2 van der Waals heterostructure and external electric field effects.

Electric field effects on the electronic structures of MoS2/antimonene van der Waals heterostructure

2019 ◽  
Vol 293 ◽  
pp. 28-32 ◽  
Author(s):  
Wei Li ◽  
Yaqiang Ma ◽  
Xiaolong Wang ◽  
Xianqi Dai
Keyword(s):  
Electric Field ◽  
Electronic Structures ◽  
Van Der Waals ◽  
Electric Field Effects ◽  
Field Effects ◽  
Van Der Waals Heterostructure

Vertical strain and electric field tunable electronic properties of type-II band alignment C2N/InSe van der Waals heterostructure

2019 ◽  
Vol 716 ◽  
pp. 155-161 ◽  
Author(s):  
Khang D. Pham ◽  
Nguyen N. Hieu ◽  
Le M. Bui ◽  
Huynh V. Phuc ◽  
Bui D. Hoi ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Van Der Waals ◽  
Band Alignment ◽  
Type Ii ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Stacking and electric field effects on the band alignment and electronic properties of the GeC/GaSe heterostructure

2020 ◽  
Vol 120 ◽  
pp. 114050
Author(s):  
Dat D. Vo ◽  
Vo T.T. Vi ◽  
Tan Phat Dao ◽  
Tuan V. Vu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Band Alignment ◽  
Electric Field Effects ◽  
Field Effects

The electric field modulation of electronic properties in a type-II phosphorene/PbI2 van der Waals heterojunction

2019 ◽  
Vol 21 (15) ◽  
pp. 7765-7772 ◽  
Author(s):  
Yuting Wei ◽  
Fei Wang ◽  
Wenli Zhang ◽  
Xiuwen Zhang
Keyword(s):  
Solar Energy ◽  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Band Alignment ◽  
Type Ii ◽  
Direct Bandgap ◽  
Field Modulation

The 0.52/0.83 eV direct bandgap of P/PbI2 possesses a type-II band alignment, can effectively be regulated to 0.90/1.54 eV using an external electric field in DFT/HSE06, and is useful for solar energy and optoelectronic devices.

Controlling electronic properties of PtS2/InSe van der Waals heterostructure via external electric field and vertical strain

2019 ◽  
Vol 724 ◽  
pp. 1-7 ◽  
Author(s):  
Chuong V. Nguyen ◽  
H.D. Bui ◽  
Trinh D. Nguyen ◽  
Khang D. Pham
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
Van Der Waals ◽  
Vertical Strain ◽  
Van Der Waals Heterostructure

Tailoring the structural and electronic properties of an SnSe2/MoS2 van der Waals heterostructure with an electric field and the insertion of a graphene sheet

2019 ◽  
Vol 21 (39) ◽  
pp. 22140-22148 ◽  
Author(s):  
Tuan V. Vu ◽  
Nguyen V. Hieu ◽  
Le T. P. Thao ◽  
Nguyen N. Hieu ◽  
Huynh V. Phuc ◽  
...  
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
Graphene Sheet ◽  
2D Materials ◽  
Van Der Waals ◽  
Optoelectronic Devices ◽  
Two Dimensional ◽  
Van Der Waals Heterostructure ◽  
Two Dimensional Materials ◽  
Structural And Electronic Properties

van der Waals heterostructures by stacking different two-dimensional materials are being considered as potential materials for nanoelectronic and optoelectronic devices because they can show the most potential advantages of individual 2D materials.

scholarly journals Electric field induced electronic properties modification of ZrS2/HfS2 van der Waals heterostructure

RSC Advances ◽  
2017 ◽  
Vol 7 (24) ◽  
pp. 14625-14630 ◽  
Author(s):  
Jimin Shang ◽  
Shuai Zhang ◽  
Xuerui Cheng ◽  
Zhongming Wei ◽  
Jingbo Li
Keyword(s):  
Electric Field ◽  
Electronic Properties ◽  
External Electric Field ◽  
First Principles ◽  
Van Der Waals ◽  
First Principles Calculations ◽  
Van Der Waals Heterostructure

By using first-principles calculations, we investigate the electronic properties of a ZrS2/HfS2 heterostructure modulated by an external electric field.

Tunable electronic properties in the van der Waals heterostructure of germanene/germanane

2015 ◽  
Vol 17 (18) ◽  
pp. 12194-12198 ◽  
Author(s):  
Run-wu Zhang ◽  
Chang-wen Zhang ◽  
Wei-xiao Ji ◽  
Feng Li ◽  
Miao-juan Ren ◽  
...  
Keyword(s):  
Electric Field ◽  
Band Gap ◽  
Electronic Properties ◽  
External Electric Field ◽  
High Performance ◽  
Room Temperature ◽  
Van Der Waals ◽  
Van Der Waals Heterostructure ◽  
Structural And Electronic Properties

We investigate the structural and electronic properties of germanene/germanane heterostructures. The band gap in these heterostructures can be effectively modulated by the external electric field and strain. These results provide a route to design high-performance FETs operating at room temperature in nanodevices.

Sign in / Sign up

Export Citation Format

Share Document