Remarkable charge-trapping performance based in Zr 0.5 Hf 0.5 O 2 with nanocrystal Ba 0.6 Sr 0.4 TiO 3 blocking layer for nonvolatile memory device
2016 ◽
Vol 380
(42)
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pp. 3509-3513
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2008 ◽
Vol 29
(3)
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pp. 265-268
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Keyword(s):
2008 ◽
Vol 52
(10)
◽
pp. 1573-1577
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Keyword(s):
2009 ◽
Vol 86
(7-9)
◽
pp. 1692-1695
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Keyword(s):
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2007 ◽
Vol 46
(4A)
◽
pp. 1803-1807
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Keyword(s):
Keyword(s):