Spin-gapless semiconductors for future spintronics and electronics

2020 ◽  
Vol 888 ◽  
pp. 1-57 ◽  
Author(s):  
Xiaotian Wang ◽  
Zhenxiang Cheng ◽  
Gang Zhang ◽  
Hongkuan Yuan ◽  
Hong Chen ◽  
...  
Keyword(s):  
Spin Gapless Semiconductors

scholarly journals Erratum: Realization of Spin Gapless Semiconductors: The Heusler Compound Mn2CoAl [Phys. Rev. Lett. 110 , 100401 (2013)]

2019 ◽  
Vol 122 (5) ◽  
Author(s):  
Siham Ouardi ◽  
Gerhard H. Fecher ◽  
Claudia Felser ◽  
Jürgen Kübler
Keyword(s):  
Heusler Compound ◽  
Spin Gapless Semiconductors

2D Mn2C6Se12 and Mn2C6S6Se6: Intrinsic Room-Temperature Dirac Spin Gapless Semiconductors and Perfect Spin Transport Properties

2020 ◽  
Vol 124 (29) ◽  
pp. 16127-16135 ◽  
Author(s):  
Xuming Wu ◽  
Yulin Feng ◽  
Si Li ◽  
Boqun Zhang ◽  
Guoying Gao
Keyword(s):  
Transport Properties ◽  
Room Temperature ◽  
Spin Transport ◽  
Spin Gapless Semiconductors ◽  
Dirac Spin

scholarly journals A new spin gapless semiconductors family: Quaternary Heusler compounds

2013 ◽  
Vol 102 (1) ◽  
pp. 17007 ◽  
Author(s):  
G. Z. Xu ◽  
E. K. Liu ◽  
Y. Du ◽  
G. J. Li ◽  
G. D. Liu ◽  
...  
Keyword(s):  
Heusler Compounds ◽  
Spin Gapless Semiconductors

scholarly journals Robust Spin-Gapless Behavior in the Newly Discovered Half Heusler Compound MnPK

Materials ◽  
2019 ◽  
Vol 12 (19) ◽  
pp. 3117 ◽  
Author(s):  
Jiaxue You ◽  
Jieting Cao ◽  
Rabah Khenata ◽  
Xiaotian Wang ◽  
Xunan Shen ◽  
...  
Keyword(s):  
First Principles ◽  
Experimental Studies ◽  
First Principles Calculation ◽  
Generalized Gradient ◽  
Good Resistance ◽  
Heusler Compound ◽  
New Class ◽  
Hubbard U ◽  
Calculation Results ◽  
Spin Gapless Semiconductors

Spin gapless semiconductors have aroused high research interest since their discovery and a lot of effort has been exerted on their exploration, in terms of both theoretical calculation and experimental verification. Among different spin gapless materials, Heusler compounds stand out thanks to their high Curie temperature and highly diverse compositions. Especially, both theoretical and experimental studies have reported the presence of spin gapless properties in this kind of material. Recently, a new class of d0 − d Dirac half Heusler compound was introduced by Davatolhagh et al. and Dirac, and spin gapless semiconductivity has been successfully predicted in MnPK. To further expand the research in this direction, we conducted a systematical investigation on the spin gapless behavior of MnPK with both generalized gradient approximation (GGA) and GGA + Hubbard U methods under both uniform and tetragonal strain conditions by first principles calculation. Results show the spin gapless behavior in this material as revealed previously. Different Hubbard U values have been considered and they mainly affect the band structure in the spin-down channel while the spin gapless feature in the spin-up direction is maintained. The obtained lattice constant is very well consistent with a previous study. More importantly, it is found that the spin gapless property of MnPK shows good resistance for both uniform and tetragonal strains, and this robustness is very rare in the reported studies and can be extremely interesting and practical for the final end application. This study elaborates the electronic and magnetic properties of the half Heusler compound MnPK under uniform and tetragonal strain conditions, and the obtained results can give a very valuable reference for related research works, or even further motivate the experimental synthesis of the relative material.

scholarly journals Recent advances in Dirac spin-gapless semiconductors

2018 ◽  
Vol 5 (4) ◽  
pp. 041103 ◽  
Author(s):  
Xiaotian Wang ◽  
Tingzhou Li ◽  
Zhenxiang Cheng ◽  
Xiao-Lin Wang ◽  
Hong Chen
Keyword(s):  
Recent Advances ◽  
Spin Gapless Semiconductors ◽  
Dirac Spin

Spin-semiconducting properties in silicene nanoribbons

2014 ◽  
Vol 16 (29) ◽  
pp. 15477-15482 ◽  
Author(s):  
Yin-Chang Zhao ◽  
Jun Ni
Keyword(s):  
Electric Field ◽  
Compressive Strain ◽  
Semiconducting Properties ◽  
Silicene Nanoribbons ◽  
Spin Gapless Semiconductors

Our investigations show that silicene nanoribbons with one sawtooth edge are spin-semiconductors (left). They become spin gapless semiconductors under a suitable electric field (middle) or compressive strain (right).

Two-dimensional Dirac spin-gapless semiconductors with tunable perpendicular magnetic anisotropy and a robust quantum anomalous Hall effect

2020 ◽  
Vol 7 (8) ◽  
pp. 2071-2077 ◽  
Author(s):  
Qilong Sun ◽  
Yandong Ma ◽  
Nicholas Kioussis
Keyword(s):  
Magnetic Anisotropy ◽  
Low Power ◽  
Hall Effect ◽  
Perpendicular Magnetic Anisotropy ◽  
Anomalous Hall Effect ◽  
Two Dimensional ◽  
Power Switching ◽  
Quantum Anomalous Hall Effect ◽  
Spin Gapless Semiconductors ◽  
Dirac Spin

A 2D ferromagnetic Fe2I2 layer with a robust QAH effect towards the low-power switching of PMA in multiferroic Fe2I2/BaTiO3 bilayers.

scholarly journals Dirac spin-gapless semiconductors: promising platforms for massless and dissipationless spintronics and new (quantum) anomalous spin Hall effects

2016 ◽  
Vol 4 (2) ◽  
pp. 252-257 ◽  
Author(s):  
Xiao-Lin Wang
Keyword(s):  
Parabolic Type ◽  
Ultra Low Power ◽  
Spintronic Devices ◽  
Hall Effects ◽  
Sample Edge ◽  
Hall Effect Measurements ◽  
New Generation ◽  
Spin Hall Effects ◽  
Spin Gapless Semiconductors ◽  
Dirac Spin

Abstract It is proposed that the new generation of spintronics should be ideally massless and dissipationless for the realization of ultra-fast and ultra-low-power spintronic devices. We demonstrate that the spin-gapless materials with linear energy dispersion are unique materials that can realize these massless and dissipationless states. Furthermore, we propose four new types of spin Hall effects that consist of spin accumulation of equal numbers of electrons and holes having the same or opposite spin polarization at the sample edge in Hall effect measurements, but with vanishing Hall voltage. These new Hall effects can be classified as (quantum) anomalous spin Hall effects. The physics for massless and dissipationless spintronics and the new spin Hall effects are presented for spin-gapless semiconductors with either linear or parabolic dispersion. New possible candidates for Dirac-type or parabolic-type spin-gapless semiconductors are proposed in ferromagnetic monolayers of simple oxides with either honeycomb or square lattices.

Sign in / Sign up

Export Citation Format

Share Document