nEffects of Temperature and Pressure on Chemical Vapour Deposition in Micro-nano Porous Structure in Char Layer of Polymer Composites

2022 ◽  
pp. 109816
Author(s):  
Hui Kun ◽  
Jiang Li ◽  
Kang Li ◽  
Ning Yan ◽  
Cheng bian ◽  
...  
Keyword(s):  
Porous Structure ◽  
Polymer Composites ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Char Layer ◽  
Temperature And Pressure

Formation of Carbon Nanotube-Polymer Composites With Different Concentrations of Polystyrene Solution

2008 ◽  
Author(s):  
K. P. Yung ◽  
J. Wei ◽  
B. K. Tay
Keyword(s):  
Carbon Nanotube ◽  
Polymer Composites ◽  
Polymer Composite ◽  
Polymeric Material ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Conductive Filler ◽  
Surface Conductance ◽  
Polystyrene Solution

In this study, polystyrene was mixed with toluene by ratios of 1 wt%, 2 wt%, and 3 wt% to create polystyrene solutions. CNTs-polymer composites have been fabricated by introducing polymeric material into the CNT film grown by plasma enhanced chemical vapour deposition (PECVD). The nanotubes act as conductive filler to the composite and resulting in increases in surface conductivities. Depending on the concentration of the polystyrene solution, the increases in conductivity varied. It is shown that the surface conductance is lower for CNT-polymer composite with higher concentrated polystyrene solution.

Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-395-Pr8-402 ◽  
Author(s):  
B. Armas ◽  
M. de Icaza Herrera ◽  
C. Combescure ◽  
F. Sibieude ◽  
D. Thenegal
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Low Pressure ◽  
Cold Wall ◽  
Pressure Chemical ◽  
Mullite Coatings

Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-373-Pr8-380 ◽  
Author(s):  
P. Sourdiaucourt ◽  
A. Derré ◽  
P. Delhaès ◽  
P. David
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hafnium Carbide ◽  
Experimental Conditions

Reduction of carbon impurities in aluminium nitride from time-resolved chemical vapour deposition using trimethylaluminum

2020 ◽  
Author(s):  
Polla Rouf ◽  
Pitsiri Sukkaew ◽  
Lars Ojamäe ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Aluminium Nitride ◽  
Methyl Groups ◽  
Time Resolved ◽  
Thermally Induced ◽  
Light Emitting ◽  
Carbon Impurities ◽  
Wide Range

<p>Aluminium nitride (AlN) is a semiconductor with a wide range of applications from light emitting diodes to high frequency transistors. Electronic grade AlN is routinely deposited at 1000 °C by chemical vapour deposition (CVD) using trimethylaluminium (TMA) and NH<sub>3</sub> while low temperature CVD routes to high quality AlN are scarce and suffer from high levels of carbon impurities in the film. We report on an ALD-like CVD approach with time-resolved precursor supply where thermally induced desorption of methyl groups from the AlN surface is enhanced by the addition of an extra pulse, H<sub>2</sub>, N<sub>2</sub> or Ar between the TMA and NH<sub>3</sub> pulses. The enhanced desorption allowed deposition of AlN films with carbon content of 1 at. % at 480 °C. Kinetic- and quantum chemical modelling suggest that the extra pulse between TMA and NH<sub>3</sub> prevents re-adsorption of desorbing methyl groups terminating the AlN surface after the TMA pulse. </p>

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