Directly correlated transmission electron microscopy and atom probe tomography of grain boundary oxidation in a Ni–Al binary alloy exposed to high-temperature water

2013 ◽  
Vol 69 (7) ◽  
pp. 509-512 ◽  
Author(s):  
D.K. Schreiber ◽  
M.J. Olszta ◽  
S.M. Bruemmer
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Binary Alloy ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
High Temperature Water ◽  
Transmission Electron ◽  
Temperature Water

scholarly journals Complementary Atom Probe Tomography and Electron Microscopy of Oxidation of Ni-Base Alloys in High-Temperature Water Environments

2013 ◽  
Vol 19 (S2) ◽  
pp. 970-971 ◽  
Author(s):  
D.K. Schreiber ◽  
M.J. Olszta ◽  
S.M. Bruemmer
Keyword(s):  
Electron Microscopy ◽  
High Temperature ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
High Temperature Water ◽  
Temperature Water

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

scholarly journals Correlating Atom Probe Tomography with Atomic-Resolved Scanning Transmission Electron Microscopy: Example of Segregation at Silicon Grain Boundaries

2017 ◽  
Vol 23 (2) ◽  
pp. 291-299 ◽  
Author(s):  
Andreas Stoffers ◽  
Juri Barthel ◽  
Christian H. Liebscher ◽  
Baptiste Gault ◽  
Oana Cojocaru-Mirédin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Atom Probe Tomography ◽  
Scanning Transmission Electron Microscopy ◽  
Atom Probe ◽  
Scanning Transmission Electron ◽  
Transmission Electron ◽  
Scanning Transmission

AbstractIn the course of a thorough investigation of the performance-structure-chemistry interdependency at silicon grain boundaries, we successfully developed a method to systematically correlate aberration-corrected scanning transmission electron microscopy and atom probe tomography. The correlative approach is conducted on individual APT and TEM specimens, with the option to perform both investigations on the same specimen in the future. In the present case of a Σ9 grain boundary, joint mapping of the atomistic details of the grain boundary topology, in conjunction with chemical decoration, enables a deeper understanding of the segregation of impurities observed at such grain boundaries.

Origins of meteoritic nanodiamonds investigated by coordinated atom‐probe tomography and transmission electron microscopy studies

2019 ◽  
Vol 55 (6) ◽  
pp. 1382-1403 ◽  
Author(s):  
Josiah B. Lewis ◽  
Christine Floss ◽  
Dieter Isheim ◽  
Tyrone L. Daulton ◽  
David N. Seidman ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atom Probe Tomography ◽  
Atom Probe ◽  
Transmission Electron

Motion of Crystal/Crystal and Crystal/Amorphous Interfaces

1990 ◽  
Vol 183 ◽  
Author(s):  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Grain Boundary ◽  
Boundary Motion ◽  
High Temperature Annealing ◽  
Thermally Activated ◽  
Transmission Electron ◽  
Grain Boundary Motion

AbstractMotion of ordered twin/matrix interfaces in films of silicon on sapphire occurs during high temperature annealing. This process is shown to be thermally activated and is analogous to grain boundary motion. Motion of amorphous/crystalline interfaces occurs during recrystallization of CoSi2 and NiSi2 from the amorphous phase. In-situ transmission electron microscopy has revealed details of the growth kinetics and interfacial roughness.

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